Brian E Downey

Address:

95104 Santa Juana Rd, Fernandina, FL 32034

VIN:

3N1AB61E17L684651

Make:

NISSAN

Model:

SENTRA

Year:

2007

US Patent:

20080201261, Aug 21, 2008

Filed:

Jan 16, 2008

Appl. No.:

12/015239

Inventors:

Benjamin Vides - Coral Gables FL, US
Brian Downey - Alexandria VA, US

International Classification:

G06Q 20/00

US Classification:

705 44

Abstract:

A method for electronically processing payments made to a plurality of merchants in a plurality of payment modes includes: (a) receiving information on the payments into a server; (h) processing the information into an automated clearinghouse file; (c) validating the automated clearinghouse file; and (d) sending the automated clearinghouse file from the server to an automated clearinghouse. Fraud is reduced, and rules are simplified and standardized.

US Patent:

20130325709, Dec 5, 2013

Filed:

Nov 16, 2012

Appl. No.:

13/679545

Inventors:

Brian Edward Downey - Alexandria VA, US
Sean Allen Fleming - Germantown MD, US

Assignee:

Autoscribe Corporation - Gaithersburg MD

International Classification:

G06Q 20/10

US Classification:

705 40

Abstract:

A session to enroll customers to make payments has two stages, a first stage completed on the telephone or on a merchant or debt collector website, and a second stage completed via a communications link such as a telephone or Internet link. The customer enrollment record is linked to financial account information received from the customer in the second stage and stored on a second, secure server. A token linked to the securely stored financial account information is returned to the merchant and then used by the merchant to initiate payments on that financial account. The merchant's personnel and customer record system do not store or have access to the underlying financial account information.

US Patent:

20210091746, Mar 25, 2021

Filed:

Sep 14, 2020

Appl. No.:

17/019611

Inventors:

- Arlington VA, US
Brian P. Downey - Cheverly MD, US
Matthew T. Hardy - Arlington VA, US
Eric N. Jin - Alexandria VA, US
Neeraj Nepal - Woodbridge VA, US
D. Scott Katzer - Alexandria VA, US
David J. Meyer - Annandale VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H03H 9/02
H03H 9/24

Abstract:

Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

US Patent:

20180174833, Jun 21, 2018

Filed:

Dec 15, 2017

Appl. No.:

15/843041

Inventors:

- Arlington VA, US
Brian P. Downey - Alexandria VA, US
Daniel S. Green - McLean VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 21/02

Abstract:

Methods for integrating transition metal oxide (TMO) layers into a compound semiconductor device structure via selective oxidation of transition metal nitride (TMN) layers within the structure.

US Patent:

20180130883, May 10, 2018

Filed:

Nov 9, 2017

Appl. No.:

15/807821

Inventors:

- Arlington VA, US
Brian P. Downey - Alexandria VA, US
David J. Meyer - Fairfax VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 29/20
H01L 21/3065
H01L 29/201

Abstract:

A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group III-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.

US Patent:

20160304340, Oct 20, 2016

Filed:

Apr 16, 2015

Appl. No.:

14/687943

Inventors:

David J. Meyer - Fairfax VA, US
Brian P. Downey - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

B81C 1/00

Abstract:

A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

US Patent:

20160035851, Feb 4, 2016

Filed:

Jul 30, 2015

Appl. No.:

14/813460

Inventors:

David J. Meyer - Fairfax VA, US
Brian P. Downey - Alexandria VA, US
Douglas S. Katzer - Alexandria VA, US

International Classification:

H01L 29/45
H01L 21/02
H01L 21/285

Abstract:

A method for integrating epitaxial, metallic transition metal nitride (TMN) layers within a compound semiconductor device structure. The TMN layers have a similar crystal structure to relevant semiconductors of interest such as silicon carbide (SiC) and the Group III-Nitrides (III-Ns) such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their various alloys. Additionally, the TMN layers have excellent thermal stability and can be deposited in situ with other semiconductor materials, allowing the TMN layers to be buried within the semiconductor device structure to create semiconductor/metal/semiconductor heterostructures and superlattices.

US Patent:

20150021624, Jan 22, 2015

Filed:

Jul 15, 2014

Appl. No.:

14/331440

Inventors:

David J. Meyer - Fairfax VA, US
Brian P. Downey - Alexandria VA, US

International Classification:

H01L 21/306
H01L 29/20
H01L 29/16
H01L 21/762

US Classification:

257 77, 438481, 438458, 257615

Abstract:

A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method.