Chang C Hwang

US Patent:

20120094149, Apr 19, 2012

Filed:

Oct 13, 2011

Appl. No.:

13/273076

Inventors:

Sang In Lee - Sunnyvale CA, US
Chang Wan Hwang - Sunnyvale CA, US

Assignee:

SYNOS TECHNOLOGY, INC. - Sunnyvale CA

International Classification:

C23C 16/18
B32B 9/04

US Classification:

428701, 42725528, 42725534, 118719

Abstract:

Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.