Xiangfeng Duan - Mountain View CA, US Chao Liu - San Jose CA, US
Assignee:
Nanosys, Inc. - Palo Alto CA
International Classification:
H01L 21/31
US Classification:
438758, 438128, 438507, 438509, 977891, 257E21209
Abstract:
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e. g. , memory devices).
Methods And Devices For Forming Nanostructure Monolayers And Devices Including Such Monolayers
Jian Chen - Mountain View CA, US Xiangfeng Duan - Mountain View CA, US Chao Liu - San Jose CA, US Madhuri L. Nallabolu - Sunnyvale CA, US J. Wallace Parce - Palo Alto CA, US Srikanth Ranganathan - Mountain View CA, US
Assignee:
Nanosys, Inc. - Palo Alto CA
International Classification:
G03F 7/26
US Classification:
430311, 430328, 430394, 430330
Abstract:
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e. g. , memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.
Srikanth Ranganathan - Mountain View CA, US Paul Bernatis - Sunnyvale CA, US Joel Gamoras - Vallejo CA, US Chao Liu - San Jose CA, US J. Wallace Parce - Palo Alto CA, US
Assignee:
Nanosys, Inc. - Palo Alto CA
International Classification:
C22C 5/04 B32B 15/02
US Classification:
148430, 420462, 428546
Abstract:
Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.
Methods And Devices For Forming Nanostructure Monolayers And Devices Including Such Monolayers
Jian Chen - Sunnyvale CA, US Karen Chu Cruden - Pleasanton CA, US Xiangfeng Duan - Mountain View CA, US Chao Liu - San Jose CA, US J. Wallace Parce - Palo Alto CA, US
Assignee:
Sandisk Corporation - Milpitas CA
International Classification:
H01L 21/3105
US Classification:
438782, 438128, 438674, 977845, 977855, 257E21241
Abstract:
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e. g. , memory devices).
Methods And Devices For Forming Nanostructure Monolayers And Devices Including Such Monolayers
Jian Chen - Sunnyvale CA, US Xiangfeng Duan - Los Angeles CA, US Chao Liu - San Jose CA, US Madhuri Nallabolu - Sunnyvale CA, US J. Wallace Parce - Palo Alto CA, US Srikanth Ranganathan - Mountain View CA, US
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e. g. , memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.
Post-Deposition Encapsulation Of Nanostructures: Compositions, Devices And Systems Incorporating Same
Jeffery Whiteford - Belmont CA, US Rhett Brewer - Sunnyvale CA, US Mihai Buretea - San Francisco CA, US Jian Chen - Mountain View CA, US Karen Cruden - Pleasanton CA, US Xiangfeng Duan - Mountain View CA, US William Freeman - San Mateo CA, US David Heald - Solvang CA, US Francisco Leon - Palo Alto CA, US Chao Liu - San Jose CA, US Andreas Meisel - San Francisco CA, US Kyu Min - San Jose CA, US J. Parce - Palo Alto CA, US Erik Scher - San Francisco CA, US
Assignee:
NANOSYS, Inc. - Palo Alto CA
International Classification:
B32B 5/16
US Classification:
428403000
Abstract:
Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
Post-Deposition Encapsulation Of Nanostructures: Compositions, Devices And Systems Incorporating Same
Jeffery Whiteford - Belmont CA, US Rhett Brewer - Sunnyvale CA, US Mihai Buretea - San Francisco CA, US Jian Chen - Mountain View CA, US Karen Cruden - Pleasanton CA, US Xiangfeng Duan - Mountain View CA, US William Freeman - San Mateo CA, US David Heald - Solvang CA, US Francisco Leon - Palo Alto CA, US Chao Liu - San Jose CA, US Andreas Meisel - San Francisco CA, US Kyu Min - San Jose CA, US J. Parce - Palo Alto CA, US Erik Scher - San Francisco CA, US
Assignee:
NANOSYS, Inc. - Palo Alto CA
International Classification:
B32B 5/16 B32B 15/04 B32B 17/06
US Classification:
428402240
Abstract:
Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
Jian Chen - Mountain View CA, US Xiangfeng Duan - Mountain View CA, US Karen Cruden - Pleasanton CA, US Chao Liu - San Jose CA, US Madhuri L. Nallabolu - Sunnyvale CA, US Srikanth Ranganathan - Mountain View CA, US Francisco Leon - Palo Alto CA, US J. Wallace Parce - Palo Alto CA, US
International Classification:
H01L 29/792 H01L 21/336
US Classification:
257324, 438287, 257E21409, 257E29309
Abstract:
Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide (Al2O3), hafnium oxide (HfO2), and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multistate (e.g., two, three or four bit) operation.
Feb 2012 to 2000 Senior ScientistNanosys Inc Palo Alto, CA Jul 2004 to Feb 2012 R&D ScientistSeagate Technology Pittsburgh, PA May 2001 to Jul 2004 Post Doctor Researcher & Research Staff MemberGeorgia Institute of Technology Atlanta, GA Jan 1997 to May 2001 Graduate Research AssistantShanghai Institute of Optics and Fine Mechanics
Jul 1993 to Dec 1996 Chinese Academy of Sciences, Research Scientist
Education:
Georgia Institute of Technology 1997 to 2001 Ph.D. in ChemistryUniversity of Science and Technology of China 1988 to 1993 B.S. in Chemistry
Skills:
problem solving, failure analysis, TEM, SEM, nanotechnology, coating
Cisco System Inc Santa Clara, CA May 2011 to Aug 2011 InternSAP
Jan 2010 to May 2010 InternPwC
Jun 2009 to Jan 2010 (PricewaterhouseCoopers) Intern Shanghai, China
Education:
Tongji University Jun 2010 Bachelor of Science in Software EngineeringState University of New State at Buffalo Buffalo, NY Master of Science in Computer Science and Engineering
His coauthors include fellow MIT postdoc Chao Liu; Pingchuan Ma PhD 25; Jack Eastman MEng 24; Dylan Randle and Yuri Ivanov of Amazon Robotics; MIT professors of electrical engineering and computer science Daniela Rus, who leads MITs Computer Science and Artificial Intelligence Laboratory (CSAIL);