Chen Chung Lin

US Patent:

20190057863, Feb 21, 2019

Filed:

Aug 17, 2018

Appl. No.:

16/104352

Inventors:

- Santa Clara CA, US
PAUL F. MA - Santa Clara CA, US
WEI V. TANG - Santa Clara CA, US
WENYU ZHANG - San Jose CA, US
SHIH CHUNG CHEN - Cupertino CA, US
CHEN HAN LIN - Campbell CA, US
CHI-CHOU LIN - San Jose CA, US
YI XU - San Jose CA, US
YU LEI - Foster City CA, US
NAOMI YOSHIDA - Sunnyvale CA, US
LIN DONG - San Jose CA, US
SIDDARTH KRISHNAN - Newark CA, US

International Classification:

H01L 21/02
H01L 29/40
H01L 21/28

Abstract:

Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

US Patent:

20190027347, Jan 24, 2019

Filed:

Jul 24, 2018

Appl. No.:

16/044215

Inventors:

- Berkeley CA, US
Igor Bargatin - Berkeley CA, US
Samuel M. Nicaise - Berkeley CA, US
Chen Lin - Berkeley CA, US
John Provine - Berkeley CA, US

International Classification:

H01J 45/00

Abstract:

A small-gap device system, preferably including two or more electrodes and one or more spacers maintaining a gap between two or more of the electrodes. A spacer for a small-gap device system, preferably including a plurality of legs defining a mesh structure. A method of spacer and/or small-gap device fabrication, preferably including: defining lateral features, depositing spacer material, selectively removing spacer material, separating the spacer from a fabrication substrate, and/or assembling the small-gap device.