Chi Liang Chui

US Patent:

7271458, Sep 18, 2007

Filed:

Mar 31, 2003

Appl. No.:

10/404876

Inventors:

Chi On Chui - San Mateo CA, US
Krishna C. Saraswat - Saratoga CA, US
Baylor B. Triplett - La Honda CA, US
Paul McIntyre - Sunnyvale CA, US

Assignee:

The Board of Trustees of the LeLand Stanford Junior University - Palo Alto CA

International Classification:

H01L 29/76

US Classification:

257410, 257411

Abstract:

Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiOequivalent (“T”). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.

US Patent:

7495313, Feb 24, 2009

Filed:

Jul 22, 2005

Appl. No.:

11/188140

Inventors:

Ammar Munir Nayfeh - Stanford CA, US
Chi On Chui - San Mateo CA, US
Krishna C. Saraswat - Saratoga CA, US
Takao Yonehara - Kanagawa-Ken, JP

Assignee:

Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
Canon Kabushiki Kaisha - Tokyo

International Classification:

H01L 27/082

US Classification:

257593, 257 63, 257 64, 257 65, 257E21201, 438341, 438413, 438416, 438350

Abstract:

Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

US Patent:

7629603, Dec 8, 2009

Filed:

Jun 9, 2006

Appl. No.:

11/450744

Inventors:

Chi On Chui - San Mateo CA, US
Prashant Majhi - Austin TX, US
Wilman Tsai - Saratoga CA, US
Jack T. Kavalieros - Portland OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 31/00

US Classification:

257 18, 257254, 257417, 257E29193, 257213

Abstract:

A method to form a strain-inducing semiconductor region comprising three or more species of charge-neutral lattice-forming atoms is described. In one embodiment, formation of a strain-inducing semiconductor region, comprising three or more species of charge-neutral lattice-forming atoms, laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate. Thus, a strained crystalline substrate may be provided. In another embodiment, a semiconductor region with a crystalline lattice of three or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate.

US Patent:

7772078, Aug 10, 2010

Filed:

Aug 26, 2008

Appl. No.:

12/198838

Inventors:

Ammar Munir Nayfeh - Stanford CA, US
Chi On Chui - San Mateo CA, US
Krishna C. Saraswat - Saratoga CA, US
Takao Yonehara - Kawasaki, JP

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
Canon Kabushiki Kaisha - Tokyo

International Classification:

H01L 21/76

US Classification:

438341, 438413, 438416, 438481, 438E21201

Abstract:

Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

US Patent:

7919381, Apr 5, 2011

Filed:

Mar 8, 2010

Appl. No.:

12/719796

Inventors:

Ammar Munir Nayfeh - Stanford CA, US
Chi On Chui - San Mateo CA, US
Krishna C. Saraswat - Saratoga CA, US
Takao Yonehara - Kawasaki, JP

Assignee:

Canon Kabushiki Kaisha - Tokyo
The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

H01L 21/76

US Classification:

438341, 438413, 438416, 438481, 438E21201

Abstract:

Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

US Patent:

8239396, Aug 7, 2012

Filed:

Mar 20, 2009

Appl. No.:

12/408551

Inventors:

Ji-Won Byun - Redwood City CA, US
Chi Ching Chui - San Ramon CA, US
Daniel M. Wong - Sacramento CA, US

Assignee:

Oracle International Corporation - Redwood Shores CA

International Classification:

G06F 17/30

US Classification:

707757, 707756

Abstract:

A machine-implemented method and machine-readable media for transforming sensitive data in a database is provided. Sensitive data in the database are transformed based on a query context of a query. The query may also be transformed. The transformed query may be applied against the transformed sensitive data to construct a query result. The query result with the transformed sensitive data represents a lenticular view. The lenticular view represents a modified form of the sensitive data that an end-user is allowed access to.

US Patent:

20110023082, Jan 27, 2011

Filed:

Jul 23, 2009

Appl. No.:

12/508011

Inventors:

Janaki Narasinghanallur - San Ramon CA, US
Min-Hank Ho - Newark CA, US
Thomas Keefe - Mill Valley CA, US
Eric Sedlar - Portola Valley CA, US
Chi Ching Chui - San Ramon CA, US
Vikram Pesati - San Jose CA, US

International Classification:

G06F 17/00

US Classification:

726 1, 726 4

Abstract:

An application platform examines, at runtime, various specified aspects of an application environment in which an application interacts with a user. Such examinations are made to determine a state for each of the various specified aspects. Further, the platform automatically activates particular application environment roles for the user depending on the result of the examinations. For example, an application environment role may be activated representing a particular detected mode of communication (e.g., encrypted network communications) or a particular detected manner of authentication (e.g., password authentication). Such activations are based on the detected states and specified states for the various specified aspects of the application environment. Such activations may occur in the context of an application attempting to perform an operation on an access controlled object on behalf of a user. Further, such activations may occur in the context of establishing or maintaining a user session for a user of an application.

US Patent:

20110067084, Mar 17, 2011

Filed:

Sep 17, 2009

Appl. No.:

12/561461

Inventors:

Ji-Won Byun - Redwood City CA, US
Chi Ching Chui - San Ramon CA, US
Daniel ManHung Wong - Palo Alto CA, US
Chon Hei Lei - Alameda CA, US

Assignee:

ORACLE INTERNATIONAL CORPORATION - Redwood Shores CA

International Classification:

G06F 21/00
G06F 17/30

US Classification:

726 1, 726 4, 707E17005

Abstract:

One embodiment of the present invention provides a system that secures a database configuration from undesired modifications. This system allows a security officer to issue a configuration-locking command, which activates a lock for the configuration of a database object. When a configuration lock is activated for a database object, the system prevents a user (e.g., a database administrator) from modifying the configuration of the database object, without restricting the user from accessing the database object itself. The security officer is a trusted user that is responsible for maintaining the stability of the database configuration, such that a configuration lock activated by the security officer preserves the database configuration by overriding the privileges assigned to a database administrator.