Christopher Michael Constantine

US Patent:

6444275, Sep 3, 2002

Filed:

Oct 31, 2000

Appl. No.:

09/699413

Inventors:

Daniel E. Kuhman - Fairport NY
Christopher Constantine - Safety Harbor FL
Kevin N. Beatty - St. Petersburg FL

Assignee:

Xerox Corporation - Stamford CT

International Classification:

C08J 718

US Classification:

427490, 427562, 427577

Abstract:

A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gases containing flurocarbons and depositing from the remote plasma onto a front face of a thermal ink jet printhead.

US Patent:

6544696, Apr 8, 2003

Filed:

Nov 30, 2001

Appl. No.:

09/996748

Inventors:

Russell Westerman - Largo FL
Christopher Constantine - Safety Harbor FL

Assignee:

Unaxis USA Inc. - St. Petersburg FL

International Classification:

G03F 900

US Classification:

430 5

Abstract:

An embedded attenuated phase shift mask (âEAPSMâ) includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active mask area. Conventional plasma etching techniques can be utilized without damage to the underlying quartz substrate. Alternatively, the etch stop layer comprises a transparent material that can remain intact in the mask structure.

US Patent:

7008877, Mar 7, 2006

Filed:

May 3, 2004

Appl. No.:

10/839809

Inventors:

Christopher Constantine - Safety Harbor FL, US
Jason Plumhoff - St. Pete FL, US
Russell Westerman - Largo FL, US
David J. Johnson - Palm Harbor FL, US

Assignee:

Unaxis USA Inc. - St. Petersburg FL

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438706, 438748

Abstract:

The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.

US Patent:

20030089680, May 15, 2003

Filed:

Oct 22, 2002

Appl. No.:

10/278035

Inventors:

David Johnson - Palm Harbor FL, US
Shinzo Onishi - Palm Harbor FL, US
Christopher Constantine - Safety Harbor FL, US

International Classification:

C23F001/00
B44C001/22
C03C025/68
H01L021/461
C23C016/00

US Classification:

216/068000, 118/72300I, 156/345480, 438/714000, 438/710000

Abstract:

Disclosed is a method and apparatus for the etching of a thin film upon a photomask. The etching is carried out in a reactor via an inductively coupled pulsed plasma. Pulsing of the plasma is achieved by regulating the time period (or duty cycle) in which the plasma is generated. It has been found that by decreasing the duty cycle, high etch selectively can be achieved and feature sizes can be faithfully maintained.

US Patent:

62431129, Jun 5, 2001

Filed:

Jul 1, 1996

Appl. No.:

8/673535

Inventors:

Daniel E. Kuhman - Fairport NY
Christopher Constantine - Safety Harbor FL
Kevin N. Beatty - St. Petersburg FL

Assignee:

Xerox Corporation - Stamford CT

International Classification:

B41J 2135

US Classification:

347 45

Abstract:

A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gases containing fluorocarbons and depositing from the remote plasma onto a front face of a thermal ink jet printhead.

US Patent:

56245297, Apr 29, 1997

Filed:

May 10, 1995

Appl. No.:

8/437532

Inventors:

Randy J. Shul - Albuquerque NM
Christopher Constantine - Safety Harbor FL

Assignee:

Sandia Corporation - Albuquerque NM

International Classification:

H01L 2100

US Classification:

438718

Abstract:

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.