Christopher Lin Talbot

US Patent:

6504393, Jan 7, 2003

Filed:

Jul 15, 1997

Appl. No.:

08/892734

Inventors:

Chiwoei Wayne Lo - Campbell CA
Mariel Stoops - Santa Clara CA
Christopher Graham Talbot - Menlo Park CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 3126

US Classification:

324765, 324751, 250310

Abstract:

A method of testing a semiconductor structure such as a finished or part-finished semiconductor wafer, a die on such a wafer, part of such a die, or even one functional element (e. g. a transistor or memory cell) of such a die. The method includes the steps of charging at least a part of the semiconductor structure; applying an electric field perpendicular to a surface of the structure while charging so as to determine charging potential and polarity (i. e. charging either positively or negatively); interrogating the structure including the charged part with a charged particle beam, such as an electron beam, so as to obtain voltage contrast data for the structure; and analyzing the data to determine the functionality of the element. Apparatus according to the invention for testing semiconductor structures, includes: a system for applying charge to at least part of the semiconductor structure, such as an electron beam, flood gun or mechanical probe; an electric field generator, typically an electrode spaced from the surface of the structure, which applies an electric field perpendicular to a surface of the structure so as to determine the potential and polarity of the charge applied to the element (i. e. positive or negative charge); a charged particle beam device such as an electron beam for interrogating the charged element; and a detector such as a secondary electron detector which obtains voltage contrast data from the structure on interrogation with the charged particle beam.

US Patent:

6509750, Jan 21, 2003

Filed:

Apr 30, 2001

Appl. No.:

09/846487

Inventors:

Christopher G. Talbot - Emerald Hills CA
Chiwoei Wayne Lo - Campbell CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 31302

US Classification:

324750

Abstract:

Defects in a patterned substrate are detected by positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle imaging system having a field of view (FOV) with a substantially uniform resolution over the FOV; operating the charged-particle-beam optical column to acquire images over multiple subareas of the patterned substrate lying within the FOV by scanning a charged-particle beam over the patterned substrate while maintaining the charged-particle-beam optical column fixed relative to the patterned substrate; and comparing the acquired images to a reference to identify defects in the patterned substrate. The use of a large-FOV imaging system with substantially uniform resolution over the FOV allows acquisition of images over a wide area of the patterned substrate without requiring mechanical stage moves, thereby reducing the time overhead associated with mechanical stage moves. Multiple columns can be ganged together to further improve throughput.

US Patent:

6518571, Feb 11, 2003

Filed:

Feb 10, 2001

Appl. No.:

09/781488

Inventors:

Christopher Graham Talbot - Menlo Park CA
James Henry Brown - San Jose CA

Assignee:

Schlumberger Technologies, Inc. - San Jose CA

International Classification:

H01J 3730

US Classification:

250307, 250309, 2504911, 25049221

Abstract:

Methods are provided for exposing a selected feature of an IC device, such as a selected conductor, from the back side of the substrate without disturbing adjacent features of the device, such as active regions. One such method comprises: (a) determining a region of the IC device in which the selected feature is located; (b) acquiring from the back side of the substrate an IR optical microscope image of the region; (c) aligning the IR optical microscope image with a coordinate system of a milling system; and (d) using structures visible in the IR optical microscope image as a guide, operating the milling system to expose the selected feature from the back side of the IC device without disturbing adjacent features.

US Patent:

6539106, Mar 25, 2003

Filed:

Jan 8, 1999

Appl. No.:

09/227747

Inventors:

Harry S. Gallarda - Mountain View CA
Chiwoei Wayne Lo - Campbell CA
Adam Rhoads - San Ramon CA
Christopher G. Talbot - Emerald Hills CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G06K 946

US Classification:

382149, 382286

Abstract:

Methods and apparatus are provided for inspecting a patterned substrate, comprising: preparing a reference image and a test image, extracting features from the reference image and extracting features from the test image, matching features of the reference image and features of the test image; and comparing features of the reference image and of the test image to identify defects. Embodiments include apparatus for inspecting patterned substrates, computer-readable media containing instructions for controlling a system having a processor for inspecting patterned substrates, and computer program products comprising a computer usable media having computer-readable program code embodied therein for controlling a system for inspecting patterned substrates. The images can be electron-beam voltage-contrast images.

US Patent:

6914441, Jul 5, 2005

Filed:

Apr 29, 2002

Appl. No.:

10/134210

Inventors:

Christopher G. Talbot - Emerald Hills CA, US
Chiwoei Wayne Lo - Campbell CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R031/302
G01N023/00

US Classification:

324750, 250310

Abstract:

One embodiment of the present invention is a method of detecting defects in a patterned substrate, including: (a) positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; (b) operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and (c) comparing the acquired images to a reference to identify defects in the patterned substrate.

US Patent:

7253645, Aug 7, 2007

Filed:

Feb 28, 2005

Appl. No.:

11/069491

Inventors:

Christopher G. Talbot - Emerald Hills CA, US
Chiwoei Wayne Lo - Campbell CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 31/305
G01R 31/02
G01N 23/22

US Classification:

324751, 324750, 324753, 250310

Abstract:

A method of detecting defects in a patterned substrate includes positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and comparing the acquired images to a reference to identify defects in the patterned substrate.

US Patent:

7602197, Oct 13, 2009

Filed:

Jun 7, 2004

Appl. No.:

10/560205

Inventors:

Alexander Kadyshevitch - Modiin, IL
Dmitry Shur - Holon, IL
Christopher Talbot - Emerald Hills CA, US

Assignee:

Applied Materials, Israel, Ltd. - Rehovot

International Classification:

G01R 31/00
G01R 31/307

US Classification:

324751, 324501

Abstract:

A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.

US Patent:

20060113471, Jun 1, 2006

Filed:

Jul 13, 2005

Appl. No.:

11/181659

Inventors:

Alexander Kadyshevitch - Hoddieen, IL
Christopher Talbot - Emerald Hills CA, US
Dmitry Shur - Holon, IL
Andreas Hegedus - Burlingame CA, US

International Classification:

G21K 7/00

US Classification:

250310000

Abstract:

A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.