Shibly S. Ahmed - San Jose CA, US Jun Kang - San Jose CA, US Hsiao-Han Thio - Santa Clara CA, US Imran Khan - Santa Clara CA, US Chuan Lin - Sunnyvale CA, US
Assignee:
Spansion LLC - Sunnyvale CA
International Classification:
H01L 21/425 H01L 21/44
US Classification:
438529, 438527, 438682, 257E21619
Abstract:
A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.
Helen Sarris - Burlington NJ, US Timothy B. Byrd - Charlotte NC, US Rhonna J. Clark - Charlotte NC, US Chuan Bin Lin - Richardson TX, US Daniel P. Shnowske - Waxahachie TX, US William Treadwell - Addison TX, US Mian Zhou - Dallas TX, US
Assignee:
Bank of America Corporation - Charlotte NC
International Classification:
G06Q 40/00 G07D 11/00 G07F 19/00
US Classification:
235379, 705 43, 705 44
Abstract:
Systems and methods are provided for protecting against bank card fraud and related crimes by providing a distress/fraud trigger at bank card machines, such as automated teller machines and point-of-sale terminals. The trigger initiates certain heightened-security processes designed to stop the crime, control damage, and help apprehend the criminal. For example, in one embodiment, the trigger involves the cardholder inputting a “panic” personal identification code into the bank card machine. The panic personal identification code indicates to a party involved in the bank card transaction that a fraudulent transaction may be taking place. The heightened-security processes may include, for example, displaying that the bank card machine is out-of-order, dispensing money with a GPS tracking device, requesting additional identification steps, instituting delay tactics, notifying on-site personnel, or forwarding audio or video information from the bank card machine to a bank's command center in real time or near real time.
Shibly S. Ahmed - San Jose CA, US Jun Kang - San Jose CA, US Hsiao-Han Thio - Santa Clara CA, US Imran Khan - Santa Clara CA, US Chuan Lin - Sunnyvale CA, US
Assignee:
Spansion LLC - Sunnyvale CA
International Classification:
H01L 21/336 H01L 21/44 H01L 29/788
US Classification:
438307, 257E21619, 257316, 438682
Abstract:
A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.
Method And Manufacture For Embedded Flash To Achieve High Quality Spacers For Core And High Voltage Devices And Low Temperature Spacers For High Performance Logic Devices
Simon Siu-Sing Chan - Saratoga CA, US Hidehiko Shiraiwa - San Jose CA, US Chuan Lin - Cupertino CA, US Lei Xue - Milpitas CA, US Kenichi Ohtsuka - Sunnyvale CA, US Angela Tai Hui - Fremont CA, US
A method and manufacture for memory device fabrication is provided. Spacer formation and junction formation is performed on both: a memory cell region in a core section of a memory device in fabrication, and a high-voltage device region in a periphery section of the memory device in fabrication. The spacer formation and junction formation on both the memory cell region and the high-voltage device region includes performing a rapid thermal anneal. After performing the spacer formation and junction formation on both the memory cell region and the high-voltage device region, spacer formation and junction formation is performed on a low-voltage device region in the periphery section.
Integrating Transistors With Different Poly-Silicon Heights On The Same Die
Chuan Lin - Cupertino CA, US Hidehiko Shiraiwa - San Jose CA, US Bradley Marc Davis - Mountain View CA, US Lei Xue - Milpitas CA, US Simon S. Chan - Saratoga CA, US Kenichi Ohtsuka - Sunnyvale CA, US Angela T. Hui - Fremont CA, US Scott Allan Bell - San Jose CA, US
Assignee:
Spansion LLC - Sunnyvale CA
International Classification:
H01L 29/788 H01L 21/28
US Classification:
257392, 438592, 257E21158, 257E293
Abstract:
A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first poly-silicon layer. A second poly-silicon layer is deposited over the first poly-silicon layer and the oxide region. A portion of the second poly-silicon layer that lies over the oxide region is then stripped away.
Method For Controlling Interactive Objects From A Touchpad Of A Computerized Device
System and method for controlling interactive objects on a display screen of a computerized system. First data associated with a position of the user's hand on the touchpad is transmitted to the computerized system, and a control point on a portion of this screen is generated in accordance with this first data. Second data associated with a plurality of contact points of the hand of the user on the touchpad is also obtained. This second data is analyzed in accordance with a model of a human hand, thus determining an angular position of the user's hand. The angular position of the user's hand is associated with this control point on the screen. The combination of this angular position and the control point can be used to in conjunction with various other software techniques to control various interactive objects on the screen.
Front Touchscreen And Back Touchpad Operated User Interface Employing Semi-Persistent Button Groups
- Fremont CA, US YiFan Chen - Fremont CA, US Chuan Lin - Fremont CA, US
International Classification:
G06F 3/0488 G06F 1/16 G06F 3/0346
Abstract:
Software implemented user interface oriented for one-hand operation of small handheld computerized devices, such as smartphones, which in addition to a front touchscreen additionally have been augmented with rear mounted touchpads. With one hand operation, the user typically holds their thumb in front of the device, and holds their other various fingers in back of the device. The disclosed user interface can be viewed a semi-persistent button group, typically invoked by either simultaneous front and back touches or double taps. The semi-persistent button group can contain multiple virtual touch sensitive buttons, and can be maneuvered to be within easy reach of the user's thumb so that various buttons can then be easily thumb activated.
Method For Detecting User Gestures From Alternative Touchpads Of A Handheld Computerized Device
- Mountain View CA, US Chuan Lin - Fremont CA, US Raymond C. Combs - San Jose CA, US
International Classification:
G06F 3/0488 G06F 3/0484
US Classification:
715771
Abstract:
A method for controlling a control region on a display screen of a computerized system is presented. The method includes obtaining data from a touchpad. The data is associated with a position of a portion of the hand of a user when the user operates the touchpad. The method includes transmitting the data from the touchpad to the computerized device and analyzing the data in accordance with a model of a human hand. In certain embodiments, the method includes detecting an interaction of at least the portion of the hand of the user on the first touchpad with at least one object displayed on the display screen causing at least one property of the object to be controlled in accordance with the interaction of the portion of the hand of the user on the first touchpad.
Agilent Technologies
Product Security Program Manager
Trimble Sep 2015 - Apr 2018
Information Security Analyst
City of Cincinnati Apr 2009 - Aug 2015
Informaton Security Office
City of Cincinnati Jun 2003 - Feb 2013
Senior Programmer Analyst and It Security
City of Cincinnati Dec 2010 - Feb 2013
Project Manager
Education:
Xavier University 1996 - 1998
Master of Business Administration, Masters, General Studies
Drexel University 1993
Drexel University 1987 - 1992
Bachelors, Bachelor of Science
Skills:
Access Microsoft Exchange Software Documentation Visual Basic Security Software Installation Hardware Project Management Visio Databases Information Technology Training Sharepoint Windows Xp System Administration Iis Active Directory Servers Networking Microsoft Office Computer Hardware
Interests:
Securing the Human Element C# Programming Chinese Calligraphy Economic Empowerment Chinese Classics Translation Education Meditation Environment Arts and Culture Rpg Strategy Game Science Fiction Chinese Chess Practicing Tai Chi Buddhism Health
Epoch Media Group(Ntdtv, Epochtimes Newspaper, Elite Magazine, Travel Magazine, Digital Dec 2017 - Oct 2018
Front End and Backend Developer
Prometheus Computing Llc Dec 2017 - Oct 2018
Full Stack Angular5 Developer
Thomson Reuters Aug 2000 - Dec 2017
Software Engineer
Education:
University of Missouri - Columbia 1991 - 1995
Masters, Computer Engineering
Skills:
Sql Research Agile Methodologies Software Development Databases
May 2009 to 2000 Information Security OfficerCity of Cincinnati Cincinnati, OH Dec 2010 to Feb 2013 Project ManagerCity of Cincinnati Cincinnati, OH Jun 2003 to Feb 2013 Senior Programmer Analyst
Education:
Xavier University Cincinnati, OH 1996 to 1998 MBA in Business MarketingDrexel University Philadelphia, PA 1987 to 1992 BS in Computer Information Science
Name / Title
Company / Classification
Phones & Addresses
Chuan Lin President
LINKING REALTY SOLUTIONS, INC Hold Properties · Own & Control Real Property · Equipment Rental/Leasing · Real Estate Agent/Manager
34302 Oconnell Ct, Fremont, CA 94555 1352 Valdez Way, Fremont, CA 94539
Chuan Lin President
HENGHAI INTERNATIONAL CORPORATION
* 1580 W El Camino STE 11B, Mountain View, CA 94040