Chuan H Lin

US Patent:

7939440, May 10, 2011

Filed:

Jun 15, 2005

Appl. No.:

11/152375

Inventors:

Shibly S. Ahmed - San Jose CA, US
Jun Kang - San Jose CA, US
Hsiao-Han Thio - Santa Clara CA, US
Imran Khan - Santa Clara CA, US
Chuan Lin - Sunnyvale CA, US

Assignee:

Spansion LLC - Sunnyvale CA

International Classification:

H01L 21/425
H01L 21/44

US Classification:

438529, 438527, 438682, 257E21619

Abstract:

A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.

US Patent:

8536011, Sep 17, 2013

Filed:

Mar 29, 2011

Appl. No.:

13/074836

Inventors:

Shibly S. Ahmed - San Jose CA, US
Jun Kang - San Jose CA, US
Hsiao-Han Thio - Santa Clara CA, US
Imran Khan - Santa Clara CA, US
Chuan Lin - Sunnyvale CA, US

Assignee:

Spansion LLC - Sunnyvale CA

International Classification:

H01L 21/336
H01L 21/44
H01L 29/788

US Classification:

438307, 257E21619, 257316, 438682

Abstract:

A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.

US Patent:

8598005, Dec 3, 2013

Filed:

Jul 18, 2011

Appl. No.:

13/185390

Inventors:

Simon Siu-Sing Chan - Saratoga CA, US
Hidehiko Shiraiwa - San Jose CA, US
Chuan Lin - Cupertino CA, US
Lei Xue - Milpitas CA, US
Kenichi Ohtsuka - Sunnyvale CA, US
Angela Tai Hui - Fremont CA, US

Assignee:

Spansion LLC - Sunnyvale CA

International Classification:

H01L 29/772

US Classification:

438301, 438257, 438258, 438275, 438276, 438279, 257391, 257392, 257E21626

Abstract:

A method and manufacture for memory device fabrication is provided. Spacer formation and junction formation is performed on both: a memory cell region in a core section of a memory device in fabrication, and a high-voltage device region in a periphery section of the memory device in fabrication. The spacer formation and junction formation on both the memory cell region and the high-voltage device region includes performing a rapid thermal anneal. After performing the spacer formation and junction formation on both the memory cell region and the high-voltage device region, spacer formation and junction formation is performed on a low-voltage device region in the periphery section.

US Patent:

20120241871, Sep 27, 2012

Filed:

Mar 24, 2011

Appl. No.:

13/071385

Inventors:

Chuan Lin - Cupertino CA, US
Hidehiko Shiraiwa - San Jose CA, US
Bradley Marc Davis - Mountain View CA, US
Lei Xue - Milpitas CA, US
Simon S. Chan - Saratoga CA, US
Kenichi Ohtsuka - Sunnyvale CA, US
Angela T. Hui - Fremont CA, US
Scott Allan Bell - San Jose CA, US

Assignee:

Spansion LLC - Sunnyvale CA

International Classification:

H01L 29/788
H01L 21/28

US Classification:

257392, 438592, 257E21158, 257E293

Abstract:

A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first poly-silicon layer. A second poly-silicon layer is deposited over the first poly-silicon layer and the oxide region. A portion of the second poly-silicon layer that lies over the oxide region is then stripped away.

US Patent:

20170017393, Jan 19, 2017

Filed:

Sep 29, 2016

Appl. No.:

15/280796

Inventors:

- Fremont CA, US
Chuan Lin - Fremont CA, US

International Classification:

G06F 3/0488
G06F 3/0484
G06F 3/0482
G06F 3/0354
G06F 3/0481

Abstract:

System and method for controlling interactive objects on a display screen of a computerized system. First data associated with a position of the user's hand on the touchpad is transmitted to the computerized system, and a control point on a portion of this screen is generated in accordance with this first data. Second data associated with a plurality of contact points of the hand of the user on the touchpad is also obtained. This second data is analyzed in accordance with a model of a human hand, thus determining an angular position of the user's hand. The angular position of the user's hand is associated with this control point on the screen. The combination of this angular position and the control point can be used to in conjunction with various other software techniques to control various interactive objects on the screen.

US Patent:

20160364138, Dec 15, 2016

Filed:

Aug 17, 2016

Appl. No.:

15/239652

Inventors:

- Fremont CA, US
YiFan Chen - Fremont CA, US
Chuan Lin - Fremont CA, US

International Classification:

G06F 3/0488
G06F 1/16
G06F 3/0346

Abstract:

Software implemented user interface oriented for one-hand operation of small handheld computerized devices, such as smartphones, which in addition to a front touchscreen additionally have been augmented with rear mounted touchpads. With one hand operation, the user typically holds their thumb in front of the device, and holds their other various fingers in back of the device. The disclosed user interface can be viewed a semi-persistent button group, typically invoked by either simultaneous front and back touches or double taps. The semi-persistent button group can contain multiple virtual touch sensitive buttons, and can be maneuvered to be within easy reach of the user's thumb so that various buttons can then be easily thumb activated.

US Patent:

20150100910, Apr 9, 2015

Filed:

Dec 12, 2014

Appl. No.:

14/568492

Inventors:

- Mountain View CA, US
Chuan Lin - Fremont CA, US
Raymond C. Combs - San Jose CA, US

International Classification:

G06F 3/0488
G06F 3/0484

US Classification:

715771

Abstract:

A method for controlling a control region on a display screen of a computerized system is presented. The method includes obtaining data from a touchpad. The data is associated with a position of a portion of the hand of a user when the user operates the touchpad. The method includes transmitting the data from the touchpad to the computerized device and analyzing the data in accordance with a model of a human hand. In certain embodiments, the method includes detecting an interaction of at least the portion of the hand of the user on the first touchpad with at least one object displayed on the display screen causing at least one property of the object to be controlled in accordance with the interaction of the portion of the hand of the user on the first touchpad.