Chun He

US Patent:

20170148504, May 25, 2017

Filed:

Nov 1, 2016

Appl. No.:

15/340266

Inventors:

- San Diego CA, US
SankaraRao KUNAPAREDDY - San Diego CA, US
Keunsoo ROH - San Diego CA, US
Chun Xiang HE - San Diego CA, US
Pratik PATEL - San Diego CA, US
Nicholas AMBUR - San Diego CA, US
Jeremy HAUGEN - Vista CA, US

International Classification:

G11C 11/406
G11C 7/10
G11C 11/408

Abstract:

In an embodiment, a dynamic random-access memory (DRAM) system configures an inactive portion of a DRAM die to operate in accordance with a self-refresh mode that is characterized by refreshes of the DRAM die being controlled by a local DRAM die controller integrated into the DRAM die. The DRAM system also configures an active portion of the DRAM die to operate in accordance with a controller-managed refresh mode while the inactive portion of the DRAM die operates in the self-refresh mode, the controller-managed refresh mode characterized by refreshes of the DRAM die being controlled by a controller that is external to the DRAM die.