David Edwin Carlson

US Patent:

6784361, Aug 31, 2004

Filed:

Sep 20, 2001

Appl. No.:

09/957353

Inventors:

David E. Carlson - Williamsburg VA
Guang H. Lin - Ellicott City MD
Gautam Ganguly - Williamsburg VA

Assignee:

BP Corporation North America Inc. - Warrenville IL

International Classification:

H01L 31024

US Classification:

136258, 136251, 136259, 136261, 521733

Abstract:

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

US Patent:

20040084079, May 6, 2004

Filed:

Sep 3, 2003

Appl. No.:

10/654174

Inventors:

Ralph Romero - Williamsburg VA, US
David Carlson - Williamsburg VA, US
Frank Willing - Mechanicsville VA, US
David Meakin - Quinton VA, US

International Classification:

H01L031/00

US Classification:

136/256000, 438/098000

Abstract:

A thin-film photovoltaic device comprising a hard conductive transparent oxide front contact layer, and photovoltaic modules comprising such devices. The photovoltaic modules of this invention comprising hard conductive transparent front contact layers have excellent resistance to corrosion.

US Patent:

20060130891, Jun 22, 2006

Filed:

Oct 27, 2005

Appl. No.:

11/259979

Inventors:

David Carlson - Williamsburg VA, US

International Classification:

H01L 31/00

US Classification:

136256000, 136259000, 136246000

Abstract:

A photovoltaic cell comprising a wafer comprising a semiconductor material of a first conductivity type, the wafer comprising a first light receiving surface and a second surface opposite the first surface; a first passivation layer positioned over the first surface of the wafer; a first electrical contact positioned over the second surface of the wafer; a second electrical contact positioned over the second surface of the wafer and separated electrically from the first electrical contact; a second passivation layer positioned over the second surface of the wafer in the region on the wafer that is at least between the first electrical contact and the second surface of the wafer; and a layer comprising a semiconductor material of a conductivity opposite the conductivity of the wafer and positioned in the region between the second passivation layer and the first contact.

US Patent:

20070006913, Jan 11, 2007

Filed:

Sep 11, 2006

Appl. No.:

11/530641

Inventors:

Ralph Romero - Williamsburg VA, US
David Carlson - Williamsburg VA, US
Frank Willing - Williamsburg VA, US
David Meakin - Quinton VA, US

Assignee:

BP CORPORATION NORTH AMERICA INC. - Warrenville IL

International Classification:

H01L 31/00

US Classification:

136258000

Abstract:

A thin-film photovoltaic device comprising a hard conductive transparent oxide front contact layer, and photovoltaic modules comprising such devices. The photovoltaic modules of this invention comprising hard conductive transparent front contact layers have excellent resistance to corrosion.

US Patent:

20070137692, Jun 21, 2007

Filed:

Dec 1, 2006

Appl. No.:

11/565738

Inventors:

David Carlson - Williamsburg VA, US

Assignee:

BP CORPORATION NORTH AMERICA INC. - Warrenville IL

International Classification:

H01L 31/00

US Classification:

136252000

Abstract:

A photovoltaic cell comprising a wafer comprising a semiconductor material of a first conductivity type, the wafer comprising a first light receiving surface and a second surface opposite the first surface; a first passivation layer positioned over the first surface of the wafer; a first electrical contact comprising point contacts positioned over the second surface of the wafer and having a conductivity type opposite to that of the wafer; and a second electrical contact comprising point contacts and positioned over the second surface of the wafer and separated electrically from the first electrical contact and having a conductivity type the same as that of the wafer.

US Patent:

20070295399, Dec 27, 2007

Filed:

Jun 14, 2007

Appl. No.:

11/763090

Inventors:

David Carlson - Williamsburg VA, US

Assignee:

BP Corporation North America Inc. - Warrenville IL

International Classification:

H01L 31/00

US Classification:

136261000, 427074000

Abstract:

A photovoltaic cell comprising a wafer comprising a semiconductor material of a first conductivity type, the wafer comprising a first light receiving surface and a second surface opposite the first surface; a first passivation layer positioned over the first surface of the wafer; a first electrical contact comprising point contacts positioned over the second surface of the wafer and having a conductivity type opposite to that of the wafer; and a second electrical contact comprising point contacts and positioned over the second surface of the wafer and separated electrically from the first electrical contact and having a conductivity type the same as that of the wafer.

US Patent:

20090314332, Dec 24, 2009

Filed:

Jan 23, 2009

Appl. No.:

12/358894

Inventors:

Allen M. Barnett - Landenberg PA, US
David Emil Carlson - Williamsburg VA, US
William Alan Doolittle - Hampton GA, US
Christiana Beatrice Honsberg - Tempe AZ, US
Douglas Andrew Kirkpatrick - Great Falls VA, US

International Classification:

H01L 31/052

US Classification:

136246

Abstract:

This invention relates to a high efficiency solar cell with a novel architecture. In one embodiment, the solar cell is comprised of a high energy gap cell stack and a dichroic mirror. The high energy gap cell stack is exposed to solar light before there is any splitting of the solar light into spectral components. Each cell in the high energy gap cell stack absorbs the light with photons of energy greater than or equal to its energy gap, i.e., the blue-green to ultraviolet portion of the solar light. Each cell in the high energy gap cell stack is transparent to and transmits light with photons of energy less than its energy gap. Spectral splitting is then performed by means of the dichroic mirror on the remaining light, i.e., the light transmitted by the high energy gap cell stack.

US Patent:

20100084009, Apr 8, 2010

Filed:

Mar 14, 2008

Appl. No.:

12/531138

Inventors:

David E. Carlson - Williamsburg VA, US
Murray S. Bennett - Frederick MD, US

Assignee:

BP Corporation North America Inc. - Warrenville IL

International Classification:

H01L 31/00
H01L 31/18

US Classification:

136255, 136256, 438 98, 257E31124, 257E21158

Abstract:

A photovoltaic cell comprising a semiconductor wafer comprising a front, light receiving surface and an opposite back surface, a passivation layer on at least the back surface, a doped layer opposite in conductivity type to the wafer over the passivation layer, an induced inversion layer, a dielectric layer over the doped layer, and one or more localized emitter contacts and one or more localized base contacts on at least the back surface extending at least through the dielectric layer; and a neutral surface photovoltaic cell comprising a semiconductor wafer comprising a front, light receiving surface and an opposite back surface, neutral passivation layer on at least the back surface, a dielectric layer over the passivation layer, and one or more localized emitter contacts and one or more localized base contacts on at least the back surface extending at least through the dielectric layer.