David B Maloney

US Patent:

6417112, Jul 9, 2002

Filed:

Jun 30, 1999

Appl. No.:

09/343532

Inventors:

Catherine M. Peyne - Hayward CA
David J. Maloney - Livermore CA
Shihying Lee - Fremont CA
Wai Mun Lee - Fremont CA
Leslie W. Arkless - Glasgow, GB

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 21302

US Classification:

438754, 438963, 134 1

Abstract:

A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of UISI manufacturing in a dual damascene structure.

US Patent:

6566276, May 20, 2003

Filed:

Jun 6, 2001

Appl. No.:

09/875115

Inventors:

David J. Maloney - Pleasanton CA
Wai M. Lee - Fremont CA
Michael A. Fury - San Francisco CA
Ross H. Hill - Coquitlam, CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 2131

US Classification:

438758, 430311, 430312

Abstract:

The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.

US Patent:

6635186, Oct 21, 2003

Filed:

Jan 7, 1999

Appl. No.:

09/226996

Inventors:

Robert J. Small - Dublin CA
Laurence McGhee - Duntocher, GB
David J. Maloney - Livermore CA
Maria L. Peterson - Menlo Park CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 21302

US Classification:

216 88, 216 89, 216 99, 216100, 216108, 252 791, 252 792, 438692, 438693

Abstract:

A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material.

US Patent:

6696363, Feb 24, 2004

Filed:

Jun 6, 2001

Appl. No.:

09/874330

Inventors:

Wai M. Lee - Fremont CA
David J. Maloney - Pleasanton CA
Paul J. Roman - Pleasanton CA
Michael A. Fury - San Francisco CA
Ross H. Hill - Coquitlam, CA
Clifford Henderson - Conyers GA
Sean Barstow - Atlanta GA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 2144

US Classification:

438681, 430312, 427100

Abstract:

The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.

US Patent:

6825156, Nov 30, 2004

Filed:

Jun 6, 2002

Appl. No.:

10/162679

Inventors:

Wai Mun Lee - Fremont CA
Katy Ip - Oakland CA
Xuan-Dung Dinh - San Jose CA
David John Maloney - Pleasanton CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C11D 726

US Classification:

510176, 510175, 510245, 510255, 134 13, 134 2, 134 38, 134 40

Abstract:

A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130Â C.

US Patent:

7033942, Apr 25, 2006

Filed:

Oct 10, 2003

Appl. No.:

10/683730

Inventors:

Robert J. Small - Dublin CA, US
Laurence McGhee - Duntocher, GB
David J. Maloney - Livermore CA, US
Maria L. Peterson - Menlo Park CA, US

Assignee:

DuPont Air Products NanoMaterials L.L.C. - Tempe AZ

International Classification:

H01L 21/302

US Classification:

438693, 438692

Abstract:

A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material.

US Patent:

7074640, Jul 11, 2006

Filed:

May 20, 2003

Appl. No.:

10/442860

Inventors:

David J. Maloney - Pleasanton CA, US
Wai M. Lee - Fremont CA, US
Michael A. Fury - San Francisco CA, US

Assignee:

Simon Fraser University - Burnaby

International Classification:

H01L 21/00

US Classification:

438 82, 438758

Abstract:

The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.

US Patent:

7157415, Jan 2, 2007

Filed:

Dec 4, 2001

Appl. No.:

10/007134

Inventors:

Catherine M. Peyne - Hayward CA, US
David J. Maloney - Livermore CA, US
Shihying Lee - Fremont CA, US
Wai Mun Lee - Fremont CA, US
Leslie W. Arkless - Glasgow, GB

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C23G 5/28

US Classification:

510255, 510176, 510432, 510435, 438694, 257E21224, 257E21228

Abstract:

A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.