Donald Craig Frye

US Patent:

20200199500, Jun 25, 2020

Filed:

Nov 25, 2019

Appl. No.:

16/694426

Inventors:

- Billerica MA, US
Donald FRYE - Sherman CT, US
Elizabeth THOMAS - New Milford CT, US
Jun LIU - Newtown CT, US
Michael WHITE - Ridgefield CT, US

International Classification:

C11D 7/32
C11D 11/00
C11D 7/34
C11D 7/26
C11D 7/06
C09K 13/00
H01L 21/02
B08B 3/08

Abstract:

A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

US Patent:

20200024554, Jan 23, 2020

Filed:

Jul 18, 2019

Appl. No.:

16/515935

Inventors:

- Billerica MA, US
Elizabeth THOMAS - New Milford CT, US
Jun LIU - Newtown CT, US
Michael WHITE - Ridgefield CT, US
Chao-Yu WANG - Zhubei City, TW
Donald FRYE - Sherman CT, US

International Classification:

C11D 11/00
C11D 7/50
C11D 7/32
C11D 7/34
H01L 21/02

Abstract:

A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

US Patent:

20180037852, Feb 8, 2018

Filed:

Jan 5, 2016

Appl. No.:

15/540293

Inventors:

- Billerica MA, US
Donald FRYE - Sherman CT, US
Jun LIU - Brookfield CT, US
Michael WHITE - Danbury CT, US
Danela WHITE - Danbury CT, US
Chao-Yu WANG - Zhudong Town, TW

International Classification:

C11D 11/00
B08B 3/08
C11D 3/34
C11D 3/20
C11D 3/26
H01L 21/02
C11D 3/30

Abstract:

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

US Patent:

20160351388, Dec 1, 2016

Filed:

Feb 3, 2015

Appl. No.:

15/116372

Inventors:

- Billerica MA, US
Elizabeth THOMAS - Danbury CT, US
Donald FRYE - Sherman CT, US

International Classification:

H01L 21/02
C11D 7/34
C11D 7/16
C11D 7/10
C11D 7/32
C11D 11/00
C11D 7/04
C11D 7/06
C11D 7/26

Abstract:

An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.