Eugene C Chow

US Patent:

6668628, Dec 30, 2003

Filed:

Mar 29, 2002

Appl. No.:

10/112215

Inventors:

Thomas Hantschel - Menlo Park CA
Eugene M. Chow - Stanford CA
David K. Fork - Los Altos CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01B 900

US Classification:

73105

Abstract:

Scanning probe systems, which include scanning probe microscopes (SPMs), atomic force microscope (AFMs), or profilometers, are disclosed that use cantilevered spring (e. g. , stressy metal) probes formed on transparent substrates. When released, a free end bends away from the substrate to form the cantilevered spring probe, which has an in-plane or out-of-plane tip at its free end. The spring probe is mounted in a scanning probe system and is used to scan or otherwise probe a substrate surface. A laser beam is directed through the transparent substrate onto the probe to measure tip movement during scanning or probing. Other detection schemes can also be used (e. g. , interferometry, capacitive, piezoresistive). The probes are used for topography, electrical, optical and thermal measurements. The probes also allow an SPM to operate as a depth gauge.

US Patent:

6734425, May 11, 2004

Filed:

Apr 30, 2002

Appl. No.:

10/136258

Inventors:

Thomas Hantschel - Menlo Park CA
Eugene M. Chow - Stanford CA
David K. Fork - Los Altos CA
Michel A. Rosa - Santa Clara CA
Dirk De Bruyker - Palo Alto CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01B 528

US Classification:

250306, 250307, 73105

Abstract:

Scanning probe systems, which include scanning probe microscopes (SPMs) are disclosed that include cantilevered spring (e. g. , stressy metal) probes and actuation/position sensing electrodes formed on a substrate. The actuation electrodes are used to position the spring probe relative to the substrate using electrostatic, magnetic, acoustic, or piezoelectric arrangements. An actuation signal source is switched between full on and off states to facilitate âON/OFFâ probe actuation in which the spring probe is either fully retracted against the substrate or deployed for scan operations. The position sensing electrodes are used to sense the deflected position of the spring probe relative to the substrate using resistive, magnetic, or piezoresistive arrangements. Spring probe arrays are disclosed that include multiple spring probes arranged on a single substrate. Each spring probe of the array includes a separate actuation electrode that is controlled using âON/OFFâ or tapping probe actuation, and may include a separate position sensing electrode.

US Patent:

6788086, Sep 7, 2004

Filed:

Nov 19, 2003

Appl. No.:

10/717803

Inventors:

Thomas Hantschel - Menlo Park CA
Eugene M. Chow - Stanford CA
David K. Fork - Los Altos CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01R 3102

US Classification:

324762

Abstract:

Scanning probe systems, which include scanning probe microscopes (SPMs), atomic force microscope (AFMs), or profilometers, are disclosed that use cantilevered spring (e. g. , stressy metal) probes formed on transparent substrates. When released, a free end bends away from the substrate to form the cantilevered spring probe, which has an in-plane or out-of-plane tip at its free end. The spring probe is mounted in a scanning probe system and is used to scan or otherwise probe a substrate surface. The probes are used for topography, electrical, optical and thermal measurements.

US Patent:

7015584, Mar 21, 2006

Filed:

Jul 8, 2003

Appl. No.:

10/615653

Inventors:

Eugene M. Chow - Stanford CA, US
David K. Fork - Los Altos CA, US
Thomas Hantschel - Menlo Park CA, US
Koenraad F. Van Schuylenbergh - Sunnyvale CA, US
Christopher L. Chua - San Jose CA, US

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 23/48

US Classification:

257773, 257750, 257735, 438666

Abstract:

Lithographically defined and etched spring structures are produced by various methods such that they avoid the formation of a plated metal wedge on an underside of the spring structure after release. A post is utilized to offset the spring from an underlying substrate by a distance greater than the thickness of the plated metal. A trench is etched into the substrate below the spring to provide clearance during deflection of the spring. Another spring includes a knee (bend) that provides the necessary clearance during deflection. A plating process is limited to the upper side of another spring. A released spring is used as a shadow mask for patterning resist that prevents wedge formation during plating. Various tip arrangements are disclosed that can be utilized with each spring structure.

US Patent:

7018877, Mar 28, 2006

Filed:

Sep 28, 2004

Appl. No.:

10/950413

Inventors:

William Wong - San Carlos CA, US
Chinwen Shih - Santa Clara CA, US
Rene A. Lujan - Sunnyvale CA, US
Eugene Chow - Mountain View CA, US

Assignee:

Palo Alto Research Center - Palo Alto CA

International Classification:

H01L 21/77
H01L 29/786

US Classification:

438158, 257288

Abstract:

Various exemplary embodiments of the systems and methods according to this invention provide for a method of producing a self-aligned thin film transistor, the transistor including a metal layer covering at least a portion of a doped layer, the doped layer covering at least a portion of a dielectric layer, a strain being created in the metal layer, the method includes etching an exposed portion of the doped layer to create a defect at an interface between the doped layer and the dielectric layer so as to initiate a delamination of the doped layer from the dielectric layer. The delamination of the doped layer from the dielectric layer is stopped when the defect propagates into an interface between the doped layer and the dielectric layer that has an adhesive energy that is greater than the strain of the metal layer.

US Patent:

7230440, Jun 12, 2007

Filed:

Oct 21, 2004

Appl. No.:

10/971467

Inventors:

Thomas Hantschel - Menlo Park CA, US
Eugene M. Chow - Mountain View CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

G01R 31/02
G01R 31/26

US Classification:

324762

Abstract:

A curved spring structure includes a base section extending parallel to the substrate surface, a curved cantilever section bent away from the substrate surface, and an elongated section extending from the base section along the substrate surface under the cantilevered section. The spring structure includes a spring finger formed from a self-bending material film (e. g. , stress-engineered metal, bimorph/bimetallic) that is patterned and released. A cladding layer is then electroplated and/or electroless plated onto the spring finger for strength. The elongated section is formed from plating material deposited simultaneously with cladding layers. To promote the formation of the elongated section, a cementation layer is provided under the spring finger to facilitate electroplating, or the substrate surface is pre-treated to facilitate electroless plating.

US Patent:

7241420, Jul 10, 2007

Filed:

Aug 5, 2002

Appl. No.:

10/213059

Inventors:

Thomas Hantschel - Menlo Park CA, US
David K. Fork - Los Altos CA, US
Eugene M. Chow - Stanford CA, US
Dirk De Bruyker - Palo Alto CA, US
Michel A. Rosa - San Jose CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

B01L 3/02

US Classification:

422100, 40012429, 4001243, 40012431, 40012432

Abstract:

Fluidic conduits, which can be used in microarraying systems, dip pen nanolithography systems, fluidic circuits, and microfluidic systems, are disclosed that use channel spring probes that include at least one capillary channel. Formed from spring beams (e. g. , stressy metal beams) that curve away from the substrate when released, channels can either be integrated into the spring beams or formed on the spring beams. Capillary forces produced by the narrow channels allow liquid to be gathered, held, and dispensed by the channel spring probes. Because the channel spring beams can be produced using conventional semiconductor processes, significant design flexibility and cost efficiencies can be achieved.

US Patent:

7344928, Mar 18, 2008

Filed:

Jul 28, 2005

Appl. No.:

11/193847

Inventors:

William S. Wong - San Carlos CA, US
Rene A. Lujan - Sunnyvale CA, US
Eugene M. Chow - Stanford CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

H01L 21/84

US Classification:

438151, 438159, 438160, 257E21412

Abstract:

A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched using the first print-patterned mask to form source and drain electrodes. A semiconductive layer and an insulative layer are formed thereover. A layer of photosensitive material is then deposited and exposed through the substrate, with the source and drain electrodes acting as masks for the exposure. Following development of the photosensitive material, a gate metal layer is deposited. A second print-patterned mask is then formed over the device, again by digital lithography. Etching and removal of the photosensitive material leaves the self-aligned top-gate electrode.