Ge E Xu

US Patent:

20110290638, Dec 1, 2011

Filed:

Jun 24, 2011

Appl. No.:

13/168560

Inventors:

Hiroshi Torii - Tokyo, JP
Ge Xu - San Jose CA, US

Assignee:

CANON ANELVA CORPORATION - Kawasaki-shi

International Classification:

C23C 14/34

US Classification:

20419215, 20429815, 20429806, 20429808

Abstract:

The present invention provides a sputter device and a method of manufacturing a magnetic storage medium capable of forming a buried layer with higher production efficiency in manufacturing a magnetic recording medium. In an embodiment of the present invention, cathodes in opposition to each other with a substrate () sandwiched in between are arranged and the phase of high-frequency power to be applied to each cathode is made the same. At this time, it is preferable to reduce the distance between each cathode and the substrate (). Further, it is also preferable to perform deposition of a buried layer while attracting positive ions in plasma to the substrate () by an attracting electric field.