Sandra G. Malhotra - San Jose CA, US Hanhong Chen - Milpitas CA, US Wim Y. Deweerd - San Jose CA, US Edward L. Haywood - San Jose CA, US Hiroyuki Ode - Higashihiroshima, JP Gerald Richardson - San Jose CA, US
Assignee:
Intermolecular, Inc. - San Jose CA Elpida Memory, Inc. - Tokyo
International Classification:
H01L 21/4763
US Classification:
438624, 438612, 438622, 438625, 438653, 438694
Abstract:
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.
Hanhong Chen - Milpitas CA, US Wim Y. Deweerd - San Jose CA, US Edward L. Haywood - San Jose CA, US Hiroyuki Ode - Higashihiroshima, JP Gerald Richardson - San Jose CA, US
Assignee:
INTERMOLECULAR, INC. - San Jose CA
International Classification:
H01L 29/92
US Classification:
257532
Abstract:
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.
Name / Title
Company / Classification
Phones & Addresses
Gerald Richardson Realtor
The Dreyfus Corporation Prepackaged Software
200 Park Ave Fl 7East, Hamilton, OH 45011
Gerald Donald Richardson President
Aquaponus, Inc
3829 Williams Rd, San Jose, CA 95117
Gerald Richardson Realtor
The Dreyfus Corporation
200 Park Ave FL 7EAST, Hamilton, OH 45011 (513)8638200
Sarcom - Hawthorne California since Sep 2012
Server Engineer
ITT Technical Institute - Indianapolis, Indiana Area and San Bernardino, California Jun 2008 - Aug 2012
Past student
US Army - Many Places Jun 1995 - Dec 2000
M1A1 Armor Crewman
Education:
ITT Technical Institute-Indianapolis 2010 - 2012
Information Systems Security, Computer Science
ITT Technical Institute-Indianapolis 2008 - 2012
Information Systems Security, Information Technology
South Side High School 1991 - 1995
High School Diploma, General education