Gerald D Richardson

US Patent:

8530348, Sep 10, 2013

Filed:

May 29, 2012

Appl. No.:

13/482573

Inventors:

Sandra G. Malhotra - San Jose CA, US
Hanhong Chen - Milpitas CA, US
Wim Y. Deweerd - San Jose CA, US
Edward L. Haywood - San Jose CA, US
Hiroyuki Ode - Higashihiroshima, JP
Gerald Richardson - San Jose CA, US

Assignee:

Intermolecular, Inc. - San Jose CA
Elpida Memory, Inc. - Tokyo

International Classification:

H01L 21/4763

US Classification:

438624, 438612, 438622, 438625, 438653, 438694

Abstract:

A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.

US Patent:

20130320495, Dec 5, 2013

Filed:

Jan 10, 2013

Appl. No.:

13/738510

Inventors:

Hanhong Chen - Milpitas CA, US
Wim Y. Deweerd - San Jose CA, US
Edward L. Haywood - San Jose CA, US
Hiroyuki Ode - Higashihiroshima, JP
Gerald Richardson - San Jose CA, US

Assignee:

INTERMOLECULAR, INC. - San Jose CA

International Classification:

H01L 29/92

US Classification:

257532

Abstract:

A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.

US Patent:

20150196880, Jul 16, 2015

Filed:

Dec 26, 2014

Appl. No.:

14/583470

Inventors:

Johnny Lee Stone - Las Vegas NV, US
Avery Matthew Stone - Las Vegas NV, US
Gerald Donald Richardson - San Jose CA, US

Assignee:

AQUAGYSTX, INC. - Las Vegas NV

International Classification:

B01F 3/04
A01K 63/04
A01K 63/00
A01G 1/00
A01G 31/02
E04H 4/14
C02F 1/74

Abstract:

A method comprises steps for (a) providing a liquid in a container; (b) flowing a gas to a volume within the liquid, wherein the volume is at least partially submerged in the liquid; and (c) repeatedly increasing and decreasing the volume, wherein the cycles of increasing and decreasing generates a pulsed aerated flow, wherein at least one of the pulsed aerated flow is released within the container and the pulsed aerated flow is released outside the container.