Gregory George Armstrong

US Patent:

53745809, Dec 20, 1994

Filed:

Sep 30, 1993

Appl. No.:

8/129011

Inventors:

David A. Baglee - Houston TX
Robert R. Doering - Plano TX
Gregory J. Armstrong - Houston TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2170
H01L 2700

US Classification:

437 52

Abstract:

A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A refractory metal word line forms the gate of the access transistor at a hole in the polysilicon field plate.

US Patent:

51702347, Dec 8, 1992

Filed:

Aug 27, 1991

Appl. No.:

7/758318

Inventors:

David A. Baglee - Houston TX
Robert R. Doering - Plano TX
Gregory J. Armstrong - Houston TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2968
H01L 2702
H01L 2934

US Classification:

257301

Abstract:

A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A word line forms the gate of the access transistor at a hole in the polysilicon field plate.

US Patent:

20180363416, Dec 20, 2018

Filed:

Jun 14, 2017

Appl. No.:

15/622107

Inventors:

Do Seo Park - Houston TX, US
Marc Samuelson - Houston TX, US
Zhi Yong He - Cypress TX, US
Gregory Armstrong - Houston TX, US
Donavan Holland Brown - Houston TX, US

Assignee:

Baker Hughes Incorporated - Houston TX

International Classification:

E21B 34/08
F16K 15/04
F16K 15/02
F16K 25/00
F16K 25/04
F16K 31/122

Abstract:

A pressurized seat check valve including a flexible frustoconical seat having a back surface configured for exposure to upstream pressure, a closure member in sealable communication with the seat, the closure member being biased into contact with the seat and, in use, the seat being deflected toward the closure member by the exposure to upstream pressure.