Hsin Tsu Tseng

US Patent:

6501865, Dec 31, 2002

Filed:

Feb 16, 2000

Appl. No.:

09/505393

Inventors:

Satoru C. Tanaka - San Jose CA
Hsin Fu Tseng - San Jose CA
Pheng Tan - San Jose CA

Assignee:

Peripheral Imaging Corporation - San Jose CA

International Classification:

G06K 700

US Classification:

382312, 358482

Abstract:

A dynamic threshold two-level A/D converter, also termed a tracking digitizer circuit. The module circuitry includes a comparator circuit and a tracking low-pass filter circuit. The dynamic thresholding module takes the output signals from a CIS module and develops a tracking (variable) background signal. The tracking background signal is then compared to the output signals from the CIS in a comparator. The comparator outputs a two-level (binary) output digital signal. The circuit is designed to be used in conjunction with a scanning device, particularly a CIS system. The circuit can be used in a wide variety of applications that require pre-processed digitized video signals. The dynamic thresholding modules circuitry can be implemented quite simply. Moreover, the circuit provides a very low cost and a low parts density module that can easily be incorporated with existing CIS modules without substantially increasing the size of the CIS module or the cost to manufacture the unit. The circuit requires roughly half the space required by existing digital circuits that accomplish similar ends.

US Patent:

40878333, May 2, 1978

Filed:

Jan 3, 1977

Appl. No.:

5/756356

Inventors:

Hsin Fu Tseng - Cupertino CA

Assignee:

Reticon Corporation - Sunnyvale CA

International Classification:

H01L 2978
H01L 2714
H01L 3100
H01J 3912

US Classification:

357 24

Abstract:

A photodiode array employing an analog shift register with a line of interlaced photodiodes. Alternate diodes are coupled to one of a pair of analog shift registers which are disposed on opposite sides of the line of photodiodes. An "anti-blooming" polysilicon line and a "transfer" polysilicon line are disposed along each side of the line of photodiodes adjacent to the shift registers. Each of the diffused region forming the photodiodes are coupled by a metal line to another diffused region formed between the anti-blooming and transfer polysilicon lines. This latter region acts as a remote, common region for both the anti-blooming function and transfer function.