Huyen Thi Tran

US Patent:

6638810, Oct 28, 2003

Filed:

Nov 5, 2001

Appl. No.:

10/015203

Inventors:

Mouloud Bakli - Crolles, FR
Steve G. Ghanayem - Los Altos CA
Huyen T. Tran - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 218242

US Classification:

438240, 438396, 438608, 438635, 438660, 438663, 438785

Abstract:

The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme. The invention further provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer.

US Patent:

7210988, May 1, 2007

Filed:

Aug 22, 2005

Appl. No.:

11/209167

Inventors:

Yan Wang - Sunnyvale CA, US
Stan D. Tsai - Fremont CA, US
Yongqi Hu - San Jose CA, US
Feng Q. Liu - San Jose CA, US
Liang-Yuh Chen - Foster City CA, US
Daxin Mao - Cupertino CA, US
Huyen Karen Tran - San Jose CA, US
Martin S. Wohlert - San Jose CA, US
Renhe Jia - Berkeley CA, US
Yuan A. Tian - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 53/00

US Classification:

451 56, 451443, 451456

Abstract:

Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.

US Patent:

7879255, Feb 1, 2011

Filed:

Nov 3, 2006

Appl. No.:

11/556593

Inventors:

Huyen Karen Tran - San Jose CA, US
Renhe Jia - Berkeley CA, US
You Wang - Cupertino CA, US
Stan D. Tsai - Fremont CA, US
Martin S. Wohlert - San Jose CA, US
Daxin Mao - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C09K 13/00

US Classification:

252 791, 252 792, 438692, 216103

Abstract:

Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.

US Patent:

20120053717, Mar 1, 2012

Filed:

Aug 30, 2010

Appl. No.:

12/871714

Inventors:

Alain Duboust - Sunnyvale CA, US
Stephen Jew - San Jose CA, US
David H. Mai - Palo Alto CA, US
Huyen Tran - San Jose CA, US
Wen-Chiang Tu - Mountain View CA, US
Jimin Zhang - San Jose CA, US
Ingemar Carlsson - Milpitas CA, US
Boguslaw A. Swedek - Cupertino CA, US
Zhihong Wang - Santa Clara CA, US

International Classification:

G06F 17/00

US Classification:

700100

Abstract:

A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

US Patent:

20140030956, Jan 30, 2014

Filed:

Jul 25, 2012

Appl. No.:

13/558140

Inventors:

Jimin Zhang - San Jose CA, US
Ingemar Carlsson - Milpitas CA, US
David H. Mai - Palo Alto CA, US
Huyen Tran - San Jose CA, US
Zhihong Wang - Santa Clara CA, US
Wen-Chiang Tu - Mountain View CA, US
Stephen Jew - San Jose CA, US
Boguslaw A. Swedek - Cupertino CA, US
James C. Wang - Saratoga CA, US
Yen-Chu Yang - Santa Clara CA, US

International Classification:

B24B 51/00

US Classification:

451 5

Abstract:

A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.

US Patent:

6274058, Aug 14, 2001

Filed:

Jul 2, 1999

Appl. No.:

9/347236

Inventors:

Ravi Rajagopalan - Sunnyvale CA
Patricia M. Liu - Saratoga CA
Pravin K. Narwankar - Sunnyvale CA
Huyen Tran - Sunnyvale CA
Padmanabhan Krishnaraj - San Francisco CA
Alan Ablao - San Jose CA
Tim Casper - Monte Sereno CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 100

US Classification:

216 67

Abstract:

A processing chamber cleaning method is described which utilizes microwave energy to remotely generate a reactive species to be used alone or in combination with an inert gas to remove deposits from a processing chamber. The reactive species can remove deposits from a first processing region at a first pressure and then remove deposits from a second processing region at a second pressure. Also described is a cleaning process utilizing remotely generated reactive species in a single processing region at two different pressures. Additionally, different ratios of reactive gas and inert gas may be utilized to improve the uniformity of the cleaning process, increase the cleaning rate, reduce recombination of reactive species and increase the residence time of reactive species provided to the processing chamber.

US Patent:

62042033, Mar 20, 2001

Filed:

Oct 14, 1998

Appl. No.:

9/172582

Inventors:

Pravin K. Narwankar - Sunnyvale CA
Turgut Sahin - Cupertino CA
Gregory F. Redinbo - San Jose CA
Patricia M. Liu - Saratoga CA
Huyen T. Tran - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131
H01L 21469

US Classification:

438785

Abstract:

A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.

US Patent:

63197669, Nov 20, 2001

Filed:

Feb 22, 2000

Appl. No.:

9/510582

Inventors:

Mouloud Bakli - Crolles, FR
Steve G. Ghanayem - Los Altos CA
Huyen T. Tran - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 218242

US Classification:

438240

Abstract:

The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and anunonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to form a metal/metal nitride liner/barrier scheme. The invention firer provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer.