James R Schaeffer

US Patent:

20070096226, May 3, 2007

Filed:

Oct 31, 2005

Appl. No.:

11/264069

Inventors:

Chun-Li Liu - Mesa AZ, US
Tushar Merchant - Gilbert AZ, US
Marius Orlowski - Austin TX, US
James Schaeffer - Austin TX, US
Matthew Stoker - Mesa AZ, US

International Classification:

H01L 29/94
H01L 29/76
H01L 31/00

US Classification:

257411000

Abstract:

A semiconductor device includes a substrate, a multilayered assembly of high k dielectric materials formed on the substrate, and a first conducting material formed on the upper layer of the assembly of high k dielectric materials. The multilayered high k dielectric assembly includes a lower layer, an upper layer, and a diffusion barrier layer formed between the lower and upper dielectric layers. The diffusion barrier layer has a greater affinity for oxygen than the upper and lower layers. The first conducting layer includes a conducting compound of at least a metal element and oxygen.