Jian Lin

US Patent:

20200112026, Apr 9, 2020

Filed:

Dec 3, 2019

Appl. No.:

16/701390

Inventors:

James M. Tour - Bellaire TX, US
Jian Lin - Houston TX, US
Zhiwei Peng - Hyattsville MD, US
Carter Kittrell - Houston TX, US

Assignee:

William Marsh Rice University - Houston TX

International Classification:

H01M 4/587
H01G 11/36
H01M 4/62
C08G 73/10
H01G 11/68
H01M 4/36
H01M 4/66
H01M 10/0525
H01M 10/054
C01B 32/184

Abstract:

In some embodiments, the present disclosure pertains to methods of producing a graphene material by exposing a polymer to a laser source. In some embodiments, the exposing results in formation of a graphene from the polymer. In some embodiments, the methods of the present disclosure also include a step of separating the formed graphene from the polymer to form an isolated graphene. In some embodiments, the methods of the present disclosure also include a step of incorporating the graphene material or the isolated graphene into an electronic device, such as an energy storage device. In some embodiments, the graphene is utilized as at least one of an electrode, current collector or additive in the electronic device. Additional embodiments of the present disclosure pertain to the graphene materials, isolated graphenes, and electronic devices that are formed by the methods of the present disclosure.

US Patent:

20170062821, Mar 2, 2017

Filed:

Feb 17, 2015

Appl. No.:

15/119516

Inventors:

- Houston TX, US
Jian Lin - Houston TX, US
Zhiwei Peng - Houston TX, US
Carter Kittrell - Houston TX, US

Assignee:

William Marsh Rice University - Houston TX

International Classification:

H01M 4/587
C08G 73/10
H01G 11/36
H01G 11/56
H01M 4/62
H01G 11/68
H01M 10/0525
H01M 10/054
H01M 4/66
H01M 4/36
C01B 31/04
H01G 11/58

Abstract:

In some embodiments, the present disclosure pertains to methods of producing a graphene material by exposing a polymer to a laser source. In some embodiments, the exposing results in formation of a graphene from the polymer. In some embodiments, the methods of the present disclosure also include a step of separating the formed graphene from the polymer to form an isolated graphene. In some embodiments, the methods of the present disclosure also include a step of incorporating the graphene material or the isolated graphene into an electronic device, such as an energy storage device. In some embodiments, the graphene is utilized as at least one of an electrode, current collector or additive in the electronic device. Additional embodiments of the present disclosure pertain to the graphene materials, isolated graphenes, and electronic devices that are formed by the methods of the present disclosure.

US Patent:

20160276411, Sep 22, 2016

Filed:

Jun 2, 2016

Appl. No.:

15/171196

Inventors:

James M. Tour - Bellaire TX, US
Jun Yao - Allston MA, US
Jian Lin - Houston TX, US
Krishna Palem - Houston TX, US

Assignee:

William Marsh Rice University - Houston TX

International Classification:

H01L 27/24
H01L 29/872
H01L 29/861
H01L 45/00

Abstract:

Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiO, SiON, SiONH, SiOC, SiOCH, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.

US Patent:

20160060122, Mar 3, 2016

Filed:

May 2, 2014

Appl. No.:

14/888301

Inventors:

- Houston TX, US
Ruquan Ye - Houston TX, US
Changsheng Xiang - Houston TX, US
Jian Lin - Houston TX, US
Zhiwei Peng - Houston TX, US

International Classification:

C01B 31/04

Abstract:

In some embodiments, the present disclosure pertains to methods of making graphene quantum dots from a carbon source (e.g., coal, coke, and combinations thereof) by exposing the carbon source to an oxidant. In some embodiments, the methods of the present disclosure further comprise a step of separating the formed graphene quantum dots from the oxidant. In some embodiments, the methods of the present disclosure further comprise a step of reducing the formed graphene quantum dots. In some embodiments, the methods of the present disclosure further comprise a step of enhancing a quantum yield of the graphene quantum dots. In further embodiments, the methods of the present disclosure also include a step of controlling the diameter of the formed graphene quantum dots by selecting the carbon source. In some embodiments, the formed graphene quantum dots comprise oxygen addends or amorphous carbon addends on their edges.

US Patent:

20150162381, Jun 11, 2015

Filed:

Aug 27, 2012

Appl. No.:

14/240973

Inventors:

James M. Tour - Bellaire TX, US
Jun Yao - Allston MA, US
Jian Lin - Houston TX, US
Krishna Palem - Singapore, SG

Assignee:

Nanyang Technological University - Singapore
William Marsh Rice University - Houston TX

International Classification:

H01L 27/24
H01L 29/66
H01L 45/00

Abstract:

Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiO, SiOH, SiON, SiONH, SiOCz, SiOCH, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.

US Patent:

20140313636, Oct 23, 2014

Filed:

Nov 19, 2012

Appl. No.:

14/358864

Inventors:

James M. Tour - Bellaire TX, US
Yu Zhu - Houston TX, US
Lei Li - Houston TX, US
Zheng Yan - Houston TX, US
Jian Lin - Houston TX, US

Assignee:

William Marsh Rice University - Houston TX

International Classification:

H01G 11/36
C01B 31/04

US Classification:

361502, 4234472, 427122, 427596, 428206, 428408, 428219

Abstract:

In some embodiments, the present invention provides methods of making graphene-carbon nanotube hybrid materials. In some embodiments, such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. In some embodiments, the grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In some embodiments, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. In some embodiments, the one or more junctions may include seven-membered carbon rings. Additional embodiments of the present invention pertain to graphene-carbon nanotube hybrid materials that are formed in accordance with the methods of the present invention.