Jagdish Narayan - Raleigh NC Ajay Kumar Sharma - Hillsboro OR John F. Muth - Cary NC
Assignee:
North Carolina State University - Raleigh NC
International Classification:
H01L 3300
US Classification:
257 96, 257103
Abstract:
An electronic device has an alloy layer containing magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure on a substrate. The alloy layer may be directly on the substrate or, alternatively, one or more buffer layers may be between the alloy layer and the substrate. The alloy layer may be domain-matched epitaxially grown directly on the substrate, or may be lattice-matched epitaxially grown directly on the buffer layer. The cubic layer may also be used to form single and multiple quantum wells. Accordingly, electronic devices having wider bandgap, increased binding energy of excitons, and/or reduced density of growth and/or misfit dislocations in the active layers as compared with conventional III-nitride electronic devices may be provided.
Modular Observation Crawler And Sensing Instrument And Method For Operating Same
Edward Grant - Raleigh NC John F. Muth - Cary NC John Steven Cottle - Raleigh NC Brian Ellery Dessent - Oakland CA Jason Alan Cox - Raleigh NC
Assignee:
North Carolina State University - Raleigh NC
International Classification:
B61B 1300
US Classification:
1041382, 1041381, 738658, 74110, 105365
Abstract:
A robotic apparatus adapted for locomotion in an enclosed space such as a pipe includes a combination of articulated gripping and locomotive modules. Each gripping module includes an actuator mechanically linked to gripping members such that axial forces produced by the actuator are translated to radial forces in the gripping members, whereby the gripping members are caused to alternately hold and release the engagement of the robotic apparatus with surfaces of the enclosed space. Each locomotive module includes one or more actuators adapted to alternatively expand and contract the length of the locomotive module. The sequence of operations of the gripping and locomotive modules can be controlled such that the robotic apparatus can crawl through the enclosed space in an inchworm-like fashion and is capable of navigating turns and traversing inclines.
Method For Making Optoelectronic And Microelectronic Devices Including Cubic Znmgo And/Or Cdmgo Alloys
Jagdish Narayan - Raleigh NC Ajay Kumar Sharma - Hillsboro OR John F. Muth - Cary NC
Assignee:
North Carolina State University - Raleigh NC
International Classification:
H01L 2100
US Classification:
438 22, 438 20, 257 96
Abstract:
An electronic device has an alloy layer containing magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure on a substrate. The alloy layer may be directly on the substrate or, alternatively, one or more buffer layers may be between the alloy layer and the substrate. The alloy layer may be domain-matched epitaxially grown directly on the substrate, or may be lattice-matched epitaxially grown directly on the buffer layer. The cubic layer may also be used to form single and multiple quantum wells. Accordingly, electronic devices having wider bandgap, increased binding energy of excitons, and/or reduced density of growth and/or misfit dislocations in the active layers as compared with conventional III-nitride electronic devices may be provided.
Methods And Systems For Selectively Connecting And Disconnecting Conductors In A Fabric
Anuj Dhawan - Raleigh NC, US Tushar Kanti Ghosh - Raleigh NC, US John Muth - Raleigh NC, US Abdelfattah Seyam - Cary NC, US
Assignee:
North Carolina State University - Raleigh NC
International Classification:
B32B007/00
US Classification:
428196, 428198, 442229, 442301, 442377, 442414
Abstract:
Methods and systems for selectively connecting and disconnecting conductors in a fabric are disclosed. First and second conductors are integrated into a fabric such that the conductors intersect at a crossover point. The conductors are bonded to each other at the crossover point to improve AC and DC characteristics. Disconnect areas may be provided near the crossover point to allow selective disconnection of the conductors from the crossover point.
Methods And Systems For Selectively Connecting And Disconnecting Conductors In A Fabric
Anuj Dhawan - Raleigh NC, US Tushar Kanti Ghosh - Raleigh NC, US John Muth - Raleigh NC, US Abdelfattah Seyam - Cary NC, US
Assignee:
North Carolina State University - Raleigh NC
International Classification:
B32B 37/00
US Classification:
156 731, 1562728, 428196, 428198
Abstract:
Methods and systems for selectively connecting and disconnecting conductors in a fabric are disclosed. First and second conductors are integrated into a fabric such that the conductors intersect at a crossover point. The conductors are bonded to each other at the crossover point to improve AC and DC characteristics. Disconnect areas may be provided near the crossover point to allow selective disconnection of the conductors from the crossover point.
Fabric And Yarn Structures For Improving Signal Integrity In Fabric-Based Electrical Circuits
Coaxial and twisted pair conductive yarn structures reduce signal crosstalk between adjacent lines in woven electrical networks. A coaxial conductive yarn structure includes an inner conductive yarn having a plurality of conductive strands twisted together. An outer conductive yarn is wrapped around the inner conductive yarn. An insulating layer separates the inner and outer yarns. A twisted pair conductive yarn structure includes first and second conductive yarns, each including a plurality of conductive strands being twisted together. The first and second conductive yarns are twisted together to form a helical structure. In a woven electrical network, at least one conductor of adjacent conductive yarn structures is connected to ground to reduce signal crosstalk. Coaxial and twisted pair yarn structures may also be formed simultaneously with weaving or knitting the threads that make up the structures into a fabric.
Doping Of Semiconductor Materials By Nuclear Transmutation
Noel A. Guardala - Columbia MD, US Ian Patrick Wellenius - Raleigh NC, US John F. Muth - Cary NC, US
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G21G 1/10
US Classification:
376183, 376190
Abstract:
As typically embodied, the inventive method features bombardment of atomic nuclei with He ions in order to effect transmutation of atoms from a first atomic element to a second atomic element. Two notable inventive genres describe transmutation of: oxygen to nitrogen in an oxygen-containing target (e. g. , including ZnO film); and, carbon to boron in a carbon-containing target (e. g. , including SiC film). According to the former, transmutation of O to N occurs; more specifically, transmutation of O to O occurs via nuclear bombardment, and then transmutation of O to N occurs via decay by positron emission. According to the latter, transmutation of C to B occurs; more specifically, transmutation of C to C occurs via nuclear bombardment, and then transmutation of C to B occurs via decay by positron emission. Inventive practice frequently results in significant alteration of at least one physical property among: electronic carrier concentration; resistivity; photoconductivity; luminescence; morphology.
Methods For Nanoscale Structures From Optical Lithography And Subsequent Lateral Growth
Mark Johnson - Raleigh NC, US Douglas Barlage - Durham NC, US John Muth - Cary NC, US
International Classification:
H01L 23/58
US Classification:
257651000, 977936000, 257E21400
Abstract:
Methods, and structures formed thereby, are disclosed for forming laterally grown structures with nanoscale dimensions from nanoscale arrays which can be patterned from nanoscale lithography. The structures and methods disclosed herein have applications with electronic, photonic, molecular electronic, spintronic, microfluidic or nano-mechanical (NEMS) technologies. The spacing between laterally grown structures can be a nanoscale measurement, for example with a spacing distance which can be approximately 1-50 nm, and more particularly can be from approximately 3-5 nm. This spacing is appropriate for integration of molecular electronic devices. The pitch between posts can be less than the average distance characteristic between dislocation defects for example in GaN (ρ=10/cm→d=0.1 μm) resulting an overall reduction in defect density. Large-scale integration of nanoscale devices can be achieved using lithographic equipment that is orders of magnitude less expensive that that used for advanced lithographic techniques, such as electron beam lithography.