John B Richards

Address:

1962 Discovery Cir E, Deerfield Beach, FL 33442

VIN:

JA4MS41X77U002937

Make:

MITSUBISHI

Model:

OUTLANDER

Year:

2007

US Patent:

7887850, Feb 15, 2011

Filed:

Jul 21, 2005

Appl. No.:

11/186405

Inventors:

G. Kere Kemp - Mercer Island WA, US
John Richards - Redmond WA, US

Assignee:

Ecolab Inc. - St. Paul MN

International Classification:

A61K 33/14
A61P 31/04

US Classification:

424661, 424665

Abstract:

A method for reducing pathogens in the gastrointestinal tract of a live animal comprising orally administering to the animal an effective amount of an aqueous antimicrobial solution, wherein the aqueous antimicrobial solution comprises from about 0. 01% to about 0. 1% by weight of a metal chlorite and a sufficient quantity of an acid having a first pKof from about 2. 0 to about 4. 4 to adjust the pH of the aqueous antimicrobial solution to about 2. 2 to about 4. 5 and to maintain the chlorite ion concentration in the form of chlorous acid to not more than about 35% by weight of the total chlorite ion present in the aqueous antimicrobial solution, is disclosed.

US Patent:

20210408258, Dec 30, 2021

Filed:

Jun 25, 2020

Appl. No.:

16/912118

Inventors:

- Santa Clara CA, US
Glenn A. GLASS - Portland OR, US
Thomas T. TROEGER - Portland OR, US
Suresh VISHWANATH - Portland OR, US
Jitendra Kumar JHA - Hillsboro OR, US
John F. RICHARDS - Portland OR, US
Anand S. MURTHY - Portland OR, US
Srijit MUKHERJEE - Portland OR, US

International Classification:

H01L 29/45
H01L 29/78
H01L 29/08
H01L 29/161
H01L 29/49
H01L 21/28
H01L 21/285
H01L 29/66

Abstract:

Approaches for fabricating an integrated circuit structure including a titanium silicide material, and the resulting structures, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate, a gate electrode over the top and adjacent to the sidewalls of a portion of the semiconductor fin. A titanium silicide material is in direct contact with each of first and second epitaxial semiconductor source or drain structures at first and second sides of the gate electrode. The titanium silicide material is conformal with and hermetically sealing a non-flat topography of each of the first and second epitaxial semiconductor source or drain structures. The titanium silicide material has a total atomic composition including 95% or greater stoichiometric TiSi.