Joseph H Blum

US Patent:

49784218, Dec 18, 1990

Filed:

Nov 13, 1989

Appl. No.:

7/435216

Inventors:

Ernest Bassous - Bronx NY
Joseph M. Blum - Yorktown Heights NY
Kevin K. Chan - Staten Island NY
Angela C. Lamberti - Putnam Valley NY
Constantino Lapadula - Mahopac NY
Istvan Lovas - Mahopac NY
Alan D. Wilson - Armonk NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156645

Abstract:

The method of fabrication of a monolithic silicon membrane structure in which the membrane and its supporting framework are constructed from a single ultra thick body of silicon. The fabrication sequence includes the steps of providing a doped membrane layer on the silicon body, forming an apertured mask on the silicon body, and removal of an unwanted silicon region by mechanical grinding and chemical etching to provide a well opening in the silicon body terminating in the doped membrane.

US Patent:

51907925, Mar 2, 1993

Filed:

Sep 27, 1989

Appl. No.:

7/413357

Inventors:

Joseph M. Blum - Yorktown Heights NY
Kevin K. Chan - Staten Island NY
Robert C. McIntosh - Bronx NY
Zeev A. Weinberg - White Plains NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B05D 312
C23C 1600

US Classification:

427560

Abstract:

The present invention relates to a low-pressure chemical vapor deposition (LPCVD) process for depositing silicon dioxide. In particular, the present invention describes a process involving a pre-cleaning step in which all impurities are removed from the substrate followed by a LPCVD step performed at temperatures of between 200. degree. C. and 300. degree. C. The process of the present invention is intended to replace higher temperature LPCVD and thermal processes for depositing silicon dioxide. More particularly, the present invention involves a process in which a substrate is washed using a predetermined cleaning process. The substrate is then exposed to a dilute hydrofluoric acid solution which removes native oxide and contaminants from the surface. Next, the substrate is rinsed with, for example, de-ionized water or ultra-clean water to remove any hydrofluoric acid or other residue from the previous process steps. A layer of material, for example, silicon dioxide, is then deposited using a low-pressure chemical vapor deposition process in which the gas flow comprises silane, oxygen and nitrogen at temperatures below 300. degree. C.

US Patent:

39363228, Feb 3, 1976

Filed:

Jul 29, 1974

Appl. No.:

5/492667

Inventors:

Joseph M. Blum - Yorktown Heights NY
Billy L. Crowder - Putnam Valley NY
James C. McGroddy - Putnam Valley NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2126

US Classification:

148 15

Abstract:

A method for improving the current confinement capacity of a double heterojunction laser by using a high energy implantation of oxygen in the regions of an injection laser surrounding the active region of such laser so as to make such regions semi-insulating.

US Patent:

39965287, Dec 7, 1976

Filed:

Dec 31, 1975

Appl. No.:

5/645738

Inventors:

Joseph Martin Blum - Yorktown Heights NY
Eric Gung Hwa Lean - Mahopac NY
James Cleary McGroddy - Putnam Valley NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01S 319

US Classification:

331 945H

Abstract:

An injection laser, which is chemically etched to provide mirror-like surfaces, also is provided with a chirped diffraction grating. The latter grating, which is etched in the injection laser, combines with the chemically etched sides to provide laser emission in a direction substantially parallel to the current flowing through the laser. As an alternative to the chirped diffraction grating, waveguides are included in the resulting folded cavity laser. Either of the above structures relaxes the fabrication tolerance in the inclined surfaces etched in the laser relative to known folded cavity lasing structures.

US Patent:

51339862, Jul 28, 1992

Filed:

Oct 5, 1990

Appl. No.:

7/593141

Inventors:

Joseph M. Blum - Yorktown Heights NY
Bruce Bumble - Pasadena CA
Kevin K. Chan - Staten Island NY
Joao R. Conde - Lisbon, PT
Jerome J. Cuomo - Lincolndale NY
William F. Kane - Florida NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23C 1650

US Classification:

427 39

Abstract:

A high-efficiency, low-temperature, plasma-enhanced chemical vapor deposition (PECVD) system for growing or depositing various types of thin films on substrate surfaces, or etching such surfaces, using substrates of materials such as silicon, plastic, etc. The system uses a hollow-cathode-effect electron source with a surrounding confining electrode to create a plasma at the substrate surface to insure that the density of reactive species is both enhanced and localized at the substrate surface thus causing the rate of growth of the films, or the etch rate, to increase so that the process can take place at much lower temperatures and power levels. A particular embodiment involves the growing of hydrogenated amorphous silicon (a:Si:H), at room temperature, on silicon using a tubular reactor containing a cylindrical electrode lining the inside of the reactor walls acting as a counter electrode for an rf-powered, substrate-supporting electrode near the center of the reactor. A set of silicon wafers, on which the amorphous silicon is grown, is mounted on the latter electrode. The reaction gases (silane) flowing between the electrodes are decomposed in a plasma excited by an rf power source (13.