Joseph A Ferrara

US Patent:

6710360, Mar 23, 2004

Filed:

Jul 10, 2002

Appl. No.:

10/192344

Inventors:

Joseph Ferrara - Middleton MA

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 3700

US Classification:

25049221, 250281, 250287

Abstract:

An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member movably coupled to the rotation member and supporting the workpiece for linear movement along a path of travel. The traslation member moves along a direction of movement such that a distance that the ion moves through the implantation chamber remains constant during movement of the workpiece along its path of travel.

US Patent:

6774373, Aug 10, 2004

Filed:

Jul 28, 2003

Appl. No.:

10/628170

Inventors:

Joseph Ferrara - Middleton MA

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37317

US Classification:

2504911, 25049221, 25044011, 25044211, 250281, 250398

Abstract:

An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and including an opening extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member, the third member including a rotatable drive supporting the workpiece. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

US Patent:

6900444, May 31, 2005

Filed:

Jun 16, 2004

Appl. No.:

10/869368

Inventors:

Joseph Ferrara - Middleton MA, US
Robert John Mitchell - Winchester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J037/20
H01J037/317

US Classification:

2504911, 25049221, 25044011, 25044211, 250281, 250398

Abstract:

An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member that extends into the implantation chamber, the third member including a rotatable drive supporting the workpiece having an axis of rotation offset from the axis of rotation of the first rotation member. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

US Patent:

6992309, Jan 31, 2006

Filed:

Aug 13, 2004

Appl. No.:

10/917597

Inventors:

Klaus Petry - Merrimac MA, US
Joseph Ferrara - Middleton MA, US
Klaus Becker - Kensington NH, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317

US Classification:

25049221, 250397

Abstract:

Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.

US Patent:

6992310, Jan 31, 2006

Filed:

Aug 13, 2004

Appl. No.:

10/917997

Inventors:

Joseph Ferrara - Middleton MA, US
Michael A. Graf - Belmont MA, US
Bo H. Vanderberg - Gloucester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
H01J 37/20

US Classification:

25049221, 25044211

Abstract:

Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.

US Patent:

7112808, Sep 26, 2006

Filed:

Feb 25, 2004

Appl. No.:

10/786660

Inventors:

Michael Ioannou - Acton MA, US
Mehran Asdigha - Shrewsbury MA, US
Joseph Ferrara - Middleton MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G21K 5/10

US Classification:

25049221, 25044211, 395 80

Abstract:

The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a base portion and a rotary subsystem. The rotary subsystem comprises a first link comprising a first joint, wherein the first link is rotatably coupled to the base portion by the first joint, and a second link comprising a second joint, wherein the second link is rotatably coupled to the first link by the second joint. The first joint and the second joint are spaced a predetermined distance from one another. The second link further comprising an end effector whereon the substrate resides, and wherein the end effector is operably coupled to the second link. The end effector is further spaced from the second joint by the predetermined distance, wherein a rotation of the first link and second link in a respective first direction and second direction is operable to linearly oscillate the end effector along a linear first scan path, and wherein the rotational velocity of the first link and second link does not cross zero.

US Patent:

7246985, Jul 24, 2007

Filed:

Apr 16, 2004

Appl. No.:

10/826419

Inventors:

Joseph Ferrara - Middleton MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01L 21/677

US Classification:

414217, 414939

Abstract:

A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.

US Patent:

7276712, Oct 2, 2007

Filed:

Jul 1, 2005

Appl. No.:

11/173494

Inventors:

Joseph Ferrara - Georgetown MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/20

US Classification:

25049221, 25044211, 250281, 250287

Abstract:

An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of an implantation surface of the workpiece by the ion beam. The implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece within an interior region of the implantation chamber, the workpiece support structure. The workpiece support structure includes a rotation member coupled to the implantation chamber for changing an implantation angle of the workpiece with respect to a portion of the ion beam within the implantation chamber. The workpiece support structure also includes a translation member movably coupled to the rotation member and supporting the workpiece for movement along a path of travel wherein at least some components of the translation member components are disposed within a reduced pressure translation member chamber. The translation member chamber is isolated from the implantation chamber interior region by a dynamic seal.