Julian Te Cheng

US Patent:

6489175, Dec 3, 2002

Filed:

Dec 18, 2001

Appl. No.:

10/026846

Inventors:

Wenbin Jiang - Thousand Oaks CA 91362
Julian Cheng - San Jose CA 95120
Hsing-Chung Lee - Calabasas CA 91302

International Classification:

H01L 2100

US Classification:

438 29, 438 46, 438503, 438507

Abstract:

A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBRs are grown using MOCVD to improve the electrical performance.

US Patent:

6642070, Nov 4, 2003

Filed:

Oct 25, 2002

Appl. No.:

10/280521

Inventors:

Wenbin Jiang - Thousand Oaks CA 91362
Julian Cheng - San Jose CA 95120
Hsing-Chung Lee - Calabasas CA 91302

International Classification:

H01L 2120

US Classification:

438 22, 438 46, 438483

Abstract:

A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBRs are grown using MOCVD to improve the electrical performance.

US Patent:

6782021, Aug 24, 2004

Filed:

Mar 1, 2002

Appl. No.:

10/087408

Inventors:

Xiaodong Huang - Lompoc CA 93436
Andreas Stintz - Albuquerque NM 87110
Kevin Malloy - Albuquerque NM 87109-6304
Guangtian Liu - Santa Clara CA 95054
Luke Lester - Albuquerque NM 87122
Julian Cheng - San Jose CA 95120

International Classification:

H01S 534

US Classification:

372 45, 257 14, 372 96

Abstract:

A quantum dot vertical cavity surface-emitting laser has a low threshold gain. Top and bottom mirrors have a low mirror loss, with at least one of the mirrors being laterally oxidized to form semiconductor/oxide mirror pairs. In one embodiment, mode control layers reduce the optical field intensity in contact layers, reducing optical absorption. In one embodiment, delamination features are included to inhibit the tendency of laterally oxidized mirrors from delaminating.

US Patent:

6936486, Aug 30, 2005

Filed:

Nov 19, 2002

Appl. No.:

10/299387

Inventors:

Julian Cheng - San Jose CA, US
Guoli Liu - Camarillo CA, US

Assignee:

JDSU Uniphase Corporation - San Jose CA

International Classification:

H01L021/00

US Classification:

438 22, 438 31, 438 39, 438 42

Abstract:

An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

US Patent:

6940885, Sep 6, 2005

Filed:

Aug 30, 2002

Appl. No.:

10/231592

Inventors:

Julian Cheng - San Jose CA, US
M. V. Ramana Murty - Woodland Hills CA, US
Hsing-Chung Lee - Calabasas CA, US

Assignee:

JDS Uniphase Corporation - San Jose CA

International Classification:

H01S005/00
H01S003/094

US Classification:

372 50, 372 75

Abstract:

Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.

US Patent:

20030002771, Jan 2, 2003

Filed:

May 31, 2002

Appl. No.:

10/161486

Inventors:

Julian Cheng - San Jose CA, US
Long Yang - Union City CA, US

Assignee:

JDS Uniphase Corporation - San Jose CA

International Classification:

G02B006/12
G02B006/10

US Classification:

385/014000, 385/129000, 359/342000

Abstract:

A waveguide device for optical amplification and light amplification by stimulated emission radiation comprises an optical medium formed from a bulk glass. The optical medium is fused to a planar substrate to form a lower cladding. The bulk glass is subsequently thinned, patterned and coated with an upper cladding to form waveguide channels with sufficient mode confinement and mode field dimension compatible with direct coupling to optical fibers to achieve low insertion loss and a reduced polarization dependent loss, while obviating the need for critical fiber alignment using lensed or tapered fibers. The bulk glass is preferably an Er-doped or Er—Yb co-doped bulk glass, which when fused to quartz, or other low refractive index glass or cladding, provides a gain region less than about 5 cm long that is strongly index-guided to better confine the pump beam, and in the case of an amplifier, the signal beam.

US Patent:

20040096996, May 20, 2004

Filed:

May 2, 2003

Appl. No.:

10/428710

Inventors:

Julian Cheng - San Jose CA, US
Guoli Liu - Camarillo CA, US

International Classification:

H01L021/00
H01S005/00

US Classification:

438/022000

Abstract:

An optical device includes a light emitting region which emits light at the wavelength of operation, the light emitting region includes at least one active region. An n-type conductivity contact region is positioned on one surface of the active region and a p-type conductivity contact region is positioned on an opposite surface. The p surface of a p/n tunnel junction is positioned on the opposite surface of the p-type conductivity contact region and an n-type conductivity contact region is positioned on the n surface. The light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

US Patent:

20050031005, Feb 10, 2005

Filed:

Sep 13, 2004

Appl. No.:

10/939666

Inventors:

Julian Cheng - San Jose CA, US
Guoli Liu - Camarillo CA, US

International Classification:

H01S003/14
H01S005/00

US Classification:

372068000, 372050000

Abstract:

An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.