Jun Wang

US Patent:

20060023763, Feb 2, 2006

Filed:

Jul 28, 2004

Appl. No.:

10/902224

Inventors:

Jason Farmer - Vancouver WA, US
Mark DeVito - Vancouver WA, US
Zhe Huang - Vancouver WA, US
Paul Crump - Portland OR, US
Michael Grimshaw - Vancouver WA, US
Prabhuram Thiagarajan - Camas WA, US
Weimin Dong - Vancouver WA, US
Jun Wang - Vancouver WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01S 5/00

US Classification:

372045010, 372046010

Abstract:

A semiconductor laser and a method of forming the same are provided. The semiconductor laser includes cladding layers comprised of hybrid materials systems which have different conduction to valance band gap offset ratios with respect to GaAs. As a result of these hybrid structures, lower junction voltages on both the n-side and p-side of the laser structure are achieved, thereby increasing the electrical to optical conversion efficiency of the laser.

US Patent:

20070053396, Mar 8, 2007

Filed:

Aug 24, 2005

Appl. No.:

11/212420

Inventors:

Mark DeVito - Vancouver WA, US
Paul Crump - Portland OR, US
Jun Wang - Vancouver WA, US
Weimin Dong - Vancouver WA, US
Michael Grimshaw - Vancouver WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01S 3/14

US Classification:

372039000

Abstract:

A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of GaAs, thereby adding tensile stress to the structure. Tensile stress can be used to mitigate the compressive stress due to material mismatches within the structure (e.g., a highly strained compressive quantum well), or due to the heat sink bonding procedure.

US Patent:

20070235839, Oct 11, 2007

Filed:

Oct 7, 2005

Appl. No.:

11/246346

Inventors:

Mark DeVito - Vancouver WA, US
Paul Crump - Portland OR, US
Jun Wang - Vancouver WA, US
Weimin Dong - Vancouver WA, US
Michael Grimshaw - Vancouver WA, US
Christopher Ebert - Washougal WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01L 29/20
H01L 21/00

US Classification:

257615000, 438046000, 438093000

Abstract:

A method of minimizing stress within large area semiconductor devices which utilize a GaAs substrate and one or more thick layers of AlGaAs is provided, as well as the resultant device. In general, each thick AlGaAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an AlGaAsPlayer of approximately the same thickness and with the same concentrations of Al and Ga. The AlGaAsPlayer is lattice matched to the GaAs substrate by replacing a small percentage of the As in the layer with P.

US Patent:

20090168826, Jul 2, 2009

Filed:

Mar 26, 2008

Appl. No.:

12/079475

Inventors:

Jason Nathaniel Farmer - Vancouver WA, US
Mark Andrew DeVito - Vancouver WA, US
Zhe Huang - Vancouver WA, US
Paul Andrew Crump - Berlin, DE
Michael Peter Grimshaw - Vancouver WA, US
Prabhuram Thiagarajan - Tucson AZ, US
Weimin Dong - Vancouver WA, US
Jun Wang - Camas WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01S 5/00

US Classification:

372 45012

Abstract:

A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio.

US Patent:

20110013081, Jan 20, 2011

Filed:

Sep 16, 2010

Appl. No.:

12/883974

Inventors:

G. Finn Wredenhagen - Toronto, CA
Gary Cheng - Scarborough, CA
Kevin Ng - Unionville, CA
Neil D. Woodall - Newport Beach CA, US
Yue Ma - Pleasanton CA, US
Guodong Liu - Portland OR, US
Jun Wang - Portland OR, US

Assignee:

PIXELWORKS, INC. - Portland OR

International Classification:

H04N 7/01

US Classification:

348449, 348E07003

Abstract:

A video sequence may include a modality corresponding with an embedded pattern. At least one state machine detects the modality in accordance with difference signals. A signal generator generates the difference signals responsive to decision windows that define regions of interest in the video sequence. The modality may correspond with an embedded film source or other pattern types in the video sequence. Where the state machine detects more than one pattern, a single pattern is selected according to a predetermined priority. The video sequence may contain both static patterns and embedded film source patterns. The state machine discerns the presence of the embedded film source patterns notwithstanding the presence of the static patterns.