Kathleen S Dunn

US Patent:

20210108107, Apr 15, 2021

Filed:

Oct 13, 2020

Appl. No.:

17/069608

Inventors:

- Albany NY, US
Kathleen Dunn - Schenectady NY, US

International Classification:

C09G 1/02
C09G 1/16
C01F 17/235

Abstract:

Polishing slurries including ceria nanoparticles and methods of polishing materials using slurries including ceria nanoparticles. The slurries may include colloidal ceria nanoparticles having at least 20% surface concentration of Ceoxidation state cerium atoms. The methods of polishing materials may include continuously flowing a slurry over a surface of the material. The slurry may include deionized water, colloidal ceria nanoparticles having at least 20% surface concentration of Ceoxidation state cerium atoms, where the colloidal ceria nanoparticles include a concentration having a range of 0.01 wt. % to 3.0 wt. %, and hydrogen peroxide including a concentration having a range of 0.015 wt. % to 1.5 wt. %. The method may also include chemically and mechanically removing a portion of the material. The removed portion may include the surface of the material exposed to the slurry.