Kuo Shu Chiang

US Patent:

49718517, Nov 20, 1990

Filed:

Nov 18, 1985

Appl. No.:

6/798779

Inventors:

Armand P. Neukermans - Palo Alto CA
Kuo L. Chiang - Los Altos CA
Frederic N. Schwettmann - San Jose CA
Donald R. Bradbury - Palo Alto CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

B32B 310
B32B 1800
G03F 900

US Classification:

428137

Abstract:

A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.

US Patent:

46083260, Aug 26, 1986

Filed:

Dec 4, 1985

Appl. No.:

6/804331

Inventors:

Armand P. Neukermans - Palo Alto CA
Kuo L. Chiang - Los Altos CA
Frederic N. Schwettmann - San Jose CA
Donald R. Bradbury - Palo Alto CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

G03F 900

US Classification:

430 5

Abstract:

A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.