Mark A Scaggs

US Patent:

48665673, Sep 12, 1989

Filed:

Jan 6, 1989

Appl. No.:

7/294154

Inventors:

Harold S. Crafts - Fort Collins CO
Mark Q. Scaggs - Fort Collins CO

Assignee:

NCR Corporation - Dayton OH

International Classification:

H01I 506
H01L 2702

US Classification:

361311

Abstract:

A high frequency integrated circuit channel capacitor structure comprised of interdigitated field effect transistor gate electrodes and source/drain regions of minimum dimension and respective common connection. The multiplicity of parallel connected capacitive regions between the polysilicon gate electrode and a channel region in the substrate provide precisely controlled capacitors with exceptionally low resistance. Metallization contacts to the gate polysilicon and source/drain regions at each interleaved pattern, together with minimum channel length dimensions, minimizes the capacitive resistance. A CMOS configuration is also feasible.