Matthew J Moon

US Patent:

7682945, Mar 23, 2010

Filed:

Feb 4, 2008

Appl. No.:

12/025333

Inventors:

Chung H. Lam - Peekskill NY, US
Matthew J. Breitwisch - Yorktown Heights NY, US
Roger W. Cheek - Somers NY, US
Alejandro G. Schrott - New York NY, US
Matthew D. Moon - Jeffersonville VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/20

US Classification:

438479, 438482, 438900, 365148, 257 2, 257 3, 257 52, 257E31034

Abstract:

The present invention in one embodiment provides a method of forming a memory device that includes providing an interlevel dielectric layer including a conductive stud having a first width; forming an stack comprising a metal layer and a first insulating layer; forming a second insulating layer atop portions of the interlevel dielectric layer adjacent each sidewall of the stack; removing the first insulating layer to provide a cavity; forming a conformal insulating layer atop the second insulating layer and the cavity; applying an anisotropic etch step to the conformal insulating layer to produce a opening having a second width exposing an upper surface of the metal layer, wherein the first width is greater than the second width; and forming a memory material layer in the opening.