Michael J Hauser

US Patent:

7550730, Jun 23, 2009

Filed:

Apr 8, 2008

Appl. No.:

12/099304

Inventors:

Ethan H. Cannon - Essex Junction VT, US
Michael J. Hauser - Bolton VT, US
Timothy D. Sullivan - Underhill VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01T 1/178

US Classification:

25037002

Abstract:

The invention relates to a method of detecting alpha particles in SOI technology and a circuit thereof. The structure is a silicon-on-insulator radiation detector which includes: a charge collection node; a precharge transistor that has a source from the charge collection node, a drain at Vdd, and a gate controlled by a precharge signal; an access transistor that has a source from the charge collection node, a drain connecting to a readout node, and a gate controlled by a read-out signal; and a detector pulldown transistor having a drain from the charge collection node, a source to ground, and a grounded gate.

US Patent:

7659497, Feb 9, 2010

Filed:

Dec 6, 2005

Appl. No.:

11/275058

Inventors:

Wagdi W. Abadeer - Jericho VT, US
James W. Adkisson - Jericho VT, US
Jeffrey S. Brown - Middlesex VT, US
Kiran V. Chatty - Williston VT, US
Michael J. Hauser - Bolton VT, US
Jed H. Rankin - South Burlington VT, US
William R. Tonti - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01J 1/44
H01L 23/62

US Classification:

250206, 250214 R, 257356

Abstract:

Disclosed is a method of executing an electrical function, such as a fusing operation, by activation through a chip embedded photodiode through spectrally selected external light activation, and corresponding structure and circuit. The present invention is based on having incident light with specific intensity/wave length characteristics, in conjunction with additional circuit elements to an integrated circuit, perform the implementation of repairs, i. e. , replacing failing circuit elements with redundant ones for yield and/or reliability. Also to perform disconnection of ESD protection device from input pad once the packaged chip is placed in system. No additional pins on the package are necessary.

US Patent:

7875854, Jan 25, 2011

Filed:

Apr 8, 2008

Appl. No.:

12/099307

Inventors:

Ethan H. Cannon - Essex Junction VT, US
Michael J. Hauser - Bolton VT, US
Timothy D. Sullivan - Underhill VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01T 1/178

US Classification:

25037002

Abstract:

The invention relates to a design structure, and more particularly, to a design structure for an alpha particle sensor in SOI technology and a circuit thereof. The structure is a silicon-on-insulator radiation detector which includes: a charge collection node; a precharge transistor that has a source from the charge collection node, a drain at Vdd, and a gate controlled by a precharge signal; an access transistor that has a source from the charge collection node, a drain connecting to a readout node, and a gate controlled by a read-out signal; and a detector pulldown transistor having a drain from the charge collection node, a source to ground, and a grounded gate.

US Patent:

7915571, Mar 29, 2011

Filed:

Dec 23, 2009

Appl. No.:

12/646292

Inventors:

Wagdi W. Abadeer - Jericho VT, US
James W. Adkisson - Jericho VT, US
Jeffrey S. Brown - Middlesex VT, US
Kiran V. Chatty - Williston VT, US
Michael J. Hauser - Bolton VT, US
Jed H. Rankin - South Burlington VT, US
William R. Tonti - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 40/14
H03K 17/78
H02H 9/00
G01R 27/26

US Classification:

250206, 250214 R, 250214 SW, 361 56, 324662

Abstract:

Disclosed is a method of executing an electrical function, such as a fusing operation, by activation through a chip embedded photodiode through spectrally selected external light activation, and corresponding structure and circuit. The present invention is based on having incident light with specific intensity/wave length characteristics, in conjunction with additional circuit elements to an integrated circuit, perform the implementation of repairs, i. e. , replacing failing circuit elements with redundant ones for yield and/or reliability. Also to perform disconnection of ESD protection device from input pad one the packaged chip is placed in system. No additional pins on the package are necessary.

US Patent:

8120131, Feb 21, 2012

Filed:

Aug 26, 2009

Appl. No.:

12/547519

Inventors:

Ethan H. Cannon - Essex Junction VT, US
Michael J. Hauser - Bolton VT, US
Timothy D. Sullivan - Underhill VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 31/02

US Classification:

257444, 257443

Abstract:

An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e. g. , a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e. g. , to within 10 s of microns).

US Patent:

8647909, Feb 11, 2014

Filed:

Jan 25, 2012

Appl. No.:

13/357728

Inventors:

Ethan H. Cannon - Essex Junction VT, US
Michael J. Hauser - Bolton VT, US
Timothy D. Sullivan - Underhill VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438 56, 257E31002

Abstract:

An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e. g. , a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e. g. , to within 10 s of microns).

US Patent:

20140032135, Jan 30, 2014

Filed:

Apr 9, 2012

Appl. No.:

13/442062

Inventors:

ETHAN H. CANNON - SAMMAMISH WA, US
MICHAEL J. HAUSER - BOLTON VT, US
TIMOTHY D. SULLIVAN - UNDERHILL VT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY

International Classification:

G01T 5/02

US Classification:

702 36, 257 48

Abstract:

Systems and methods to ensure correct operation of a semiconductor chip in the presence of ionizing radiation is disclosed. The system includes a semiconductor chip, a first radiation detection array incorporated in the semiconductor chip, and at least one additional radiation detection array incorporated in the semiconductor chip. a processor determines a region of the semiconductor chip affected by an incident radiation particle by analyzing a trajectory of the radiation particle determined from locations of sensors hit by the radiation particle in the first radiation detection array and the at least one additional radiation detection array. The processor determines whether corrective action is needed based on the region of the semiconductor chip affected by the incident radiation particle.

US Patent:

20160018677, Jan 21, 2016

Filed:

Jul 16, 2014

Appl. No.:

14/332886

Inventors:

- Armonk NY, US
William M. GREEN - Astoria NY, US
Michael J. HAUSER - Bolton VT, US
Edward W. KIEWRA - South Burlington VT, US
Xuefeng LIU - Roseville CA, US
Steven M. SHANK - Jericho VT, US

International Classification:

G02F 1/025
H01L 29/10
H01L 29/08
H01L 29/423
H01L 29/40
G02B 6/136
H01L 29/49
H01L 27/088
H01L 21/306
H01L 29/66
H01L 27/06
H01L 29/78
H01L 29/06

Abstract:

A device includes a laterally diffused metal-oxide-semiconductor (LDMOS) device integrated with an optical modulator. An optical waveguide of the optical modulator includes a silicon-containing structure in a drift region of the LDMOS device.