Michael Mian

US Patent:

6740956, May 25, 2004

Filed:

Aug 15, 2002

Appl. No.:

10/219896

Inventors:

Peter J. Hopper - San Jose CA
Peter Johnson - Sunnyvale CA
Kyuwoon Hwang - Palo Alto CA
Michael Mian - Livermore CA
Robert Drury - Santa Clara CA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L 2900

US Classification:

257528, 257531

Abstract:

The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.

US Patent:

6853079, Feb 8, 2005

Filed:

Aug 15, 2002

Appl. No.:

10/219235

Inventors:

Peter J. Hopper - San Jose CA, US
Peter Johnson - Sunnyvale CA, US
Kyuwoon Hwang - Palo Alto CA, US
Michael Mian - Livermore CA, US
Robert Drury - Santa Clara CA, US

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L023/48

US Classification:

257758, 257531, 257296, 257306, 257532, 257624, 257528, 257760, 257664, 438118, 336180

Abstract:

The radio frequency (RF) impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fins that extend away from the base region. When formed in a spiral configuration having a number of loops, the metal trace forms an inductor with an increased quality factor (Q).

US Patent:

6864581, Mar 8, 2005

Filed:

Aug 15, 2002

Appl. No.:

10/219212

Inventors:

Peter J. Hopper - San Jose CA, US
Peter Johnson - Sunnyvale CA, US
Kyuwoon Hwang - Palo Alto CA, US
Michael Mian - Livermore CA, US
Robert Drury - Santa Clara CA, US

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L023/48

US Classification:

257758, 257750, 257774

Abstract:

The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.

US Patent:

6956269, Oct 18, 2005

Filed:

Dec 22, 2003

Appl. No.:

10/744252

Inventors:

Vladislav Vashchenko - Palo Alto CA, US
Michael Mian - Livermore CA, US
Peter J. Hopper - San Jose CA, US

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L029/82

US Classification:

257421, 257252, 257427

Abstract:

Spin-based microelectronic devices can be realized by utilizing spin-polarized ferromagnetic materials positioned near, or embedded in, a semiconductor channel of a microelectronic device. Applying an electric field across the channel can cause carriers flowing through the channel to deviate toward one of the ferromagnetic materials, such that the spin of the carriers tends to align with the spin polarization of the respective material. Such a process allows for the controlled spin-polarization of carriers in a semiconductor channel, and hence the development of spin-based microelectronics, without having to inject spin-polarized carriers from a ferromagnet into a semiconductor channel. Such a process avoids the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates that are well-known and used in the industry.

US Patent:

6958194, Oct 25, 2005

Filed:

Oct 21, 2003

Appl. No.:

10/689779

Inventors:

Peter J. Hopper - San Jose CA, US
Philipp Lindorfer - San Jose CA, US
Michael Mian - Livermore CA, US
Robert Drury - Santa Clara CA, US

Assignee:

Foveon, Inc. - Santa Clara CA

International Classification:

B32B009/00
H01L031/00

US Classification:

428641, 428620, 428446, 257431, 257440, 257291, 438 24, 438 48, 438584

Abstract:

An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.

US Patent:

6963091, Nov 8, 2005

Filed:

Dec 22, 2003

Appl. No.:

10/743845

Inventors:

Vladislav Vashchenko - Palo Alto CA, US
Michael Mian - Livermore CA, US
Peter J. Hopper - San Jose CA, US

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L029/66

US Classification:

257213, 257295

Abstract:

Spin-based microelectronic devices can be realized by utilizing ferromagnetic structures that make good ohmic contact with silicon, in order to avoid the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates, which are well-known and used in the industry. Thin layers of metal silicide, such as CoSiand NiSi, are used as an intermediate layer between ferromagnetic contacts, such as cobalt and nickel contacts, and the silicon substrate. The thin silicide layers provide good ohmic contact between the ferromagnetic contacts and silicon, such that spin-polarized carriers can be injected into the silicon, and detected out of the silicon, without loss of spin polarization.

US Patent:

7021151, Apr 4, 2006

Filed:

Oct 29, 2004

Appl. No.:

10/977169

Inventors:

Peter J. Hopper - San Jose CA, US
Michael Mian - Livermore CA, US
Jim McGinty - East Kilbride, GB
Robert Drury - Santa Clara CA, US

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

G01L 9/00

US Classification:

73754, 257415

Abstract:

A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. Pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.

US Patent:

7022532, Apr 4, 2006

Filed:

Aug 31, 2005

Appl. No.:

11/216980

Inventors:

Vladislav Vashchenko - Palo Alto CA, US
Michael Mian - Livermore CA, US
Peter J. Hopper - San Jose CA, US

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438 3, 438308

Abstract:

Spin-based microelectronic devices can be realized by utilizing ferromagnetic structures that make good ohmic contact with silicon, in order to avoid the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates, which are well-known and used in the industry. Thin layers of metal silicide, such as CoSiand NiSi, are used as an intermediate layer between ferromagnetic contacts, such as cobalt and nickel contacts, and the silicon substrate. The thin silicide layers provide good ohmic contact between the ferromagnetic contacts and silicon, such that spin-polarized carriers can be injected into the silicon, and detected out of the silicon, without loss of spin polarization.