Min Li

US Patent:

20110198756, Aug 18, 2011

Filed:

Aug 25, 2006

Appl. No.:

12/067285

Inventors:

ü Thenappan - München NJ, US
Chien-Wei Li - Vienna VA, US
David Nalewajek - West Seneca NY, US
Martin Cheney - Hamburg NY, US
Jingyu Lao - Saline MI, US
Eric Eisenbraun - Albany NY, US
Min Li - Troy MI, US
Nathaniel Berliner - Albany NY, US
Mikko Ritala - Espoo, FI
Markku Leskela - Espoo, FI
kaupo Kukli - Polva, EE
Linda Cheney - Hamburg NY, US

International Classification:

H01L 21/3205
H01L 29/43
H01L 23/48

US Classification:

257751, 438681, 257769, 257E21294, 257E2301, 257E29139

Abstract:

Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC′, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C′ comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C′ further and individually is substituted with a ligand represented by the formula CH(X)R, wherein X is a N, P, or S-substituted functional group or hydroxyl, and Ris hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.