Paul A Tiner

US Patent:

6423648, Jul 23, 2002

Filed:

Dec 14, 2000

Appl. No.:

09/737647

Inventors:

Ming Hwang - Dallas TX
Paul Tiner - Plano TX
Sunil Hattangady - McKinney TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21336

US Classification:

438770, 438197, 438695

Abstract:

A method of forming an ultra-thin gate oxide ( ) for a field effect transistor ( ). The gate oxide ( ) is formed by combining an oxidizing agent (e. g. , N O, CO ) with an etching agent (e. g. , H ) and adjusting the partial pressures to controllably grow a thin (Ë12 Angstroms) high quality oxide ( ).

US Patent:

20030129804, Jul 10, 2003

Filed:

May 14, 2002

Appl. No.:

10/146457

Inventors:

Manoj Mehrotra - Plano TX, US
Wayne Bather - Richardson TX, US
Reji Koshy - Rowlett TX, US
Amitabh Jain - Richardson TX, US
Mark Rodder - University Park TX, US
Rajesh Khamankar - Coppell TX, US
Paul Tiner - Plano TX, US
Rick Wise - Fairview TX, US
Darin Wedel - Euless TX, US

International Classification:

H01L021/336

US Classification:

438/303000

Abstract:

A method of forming a semiconductor device includes doping at least one region of an at least partially formed semiconductor device. The method further includes depositing at least one spacer layer outwardly from the at least one region of the at least partially formed semiconductor device. The at least one deposited spacer layer is formed in an environment that substantially minimizes dopant loss and deactivation in the at least one region of the at least partially formed semiconductor device.

US Patent:

6352941, Mar 5, 2002

Filed:

Jul 8, 1999

Appl. No.:

09/349625

Inventors:

Ming Hwang - Dallas TX
Paul Tiner - Plano TX
Sunil Hattangady - McKinney TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21336

US Classification:

438770, 438706, 438197

Abstract:

A method of forming an ultra-thin gate oxide ( ) for a field effect transistor ( ). The gate oxide ( ) is formed by combining an oxidizing agent (e. g. , N O, CO ) with an etching agent (e. g. , H ) and adjusting the partial pressures to controllably grow a thin (Ë12 Angstroms) high quality oxide ( ).