Ping N Jiang

US Patent:

20090075480, Mar 19, 2009

Filed:

Sep 18, 2007

Appl. No.:

11/856836

Inventors:

Laura M. Matz - Macungie PA, US
Ping N. Jiang - Plano TX, US
William Wesley Dostalik - Plano TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 21/311

US Classification:

438694, 257E21249

Abstract:

Interconnects of integrated circuits (ICs) utilize low-k dielectrics, copper metal lines, dual damascene processing and amplified photoresist chemistry to build ICs with features smaller than 100 nm. Photolithographic processing of interconnects with these elements are subject to resist poisoning from nitrogen in etch stop and hard mask dielectric layers. Attempts to solve this problem cause lower IC circuit performance or higher fabrication process cost and complexity. This invention comprises a method of fabricating interconnects in an IC using layers of silicon carbide doped oxide (SiCO) in a via etch stop layer, in a trench etch stop layer, as a via etch hard mask and as a trench etch hard mask.

US Patent:

20090081864, Mar 26, 2009

Filed:

Sep 21, 2007

Appl. No.:

11/859119

Inventors:

Laura M. Matz - Macungie PA, US
Ping Jiang - Plano TX, US
William Wesley Dostalik - Plano TX, US
Ting Tsui - Markham, CA

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 21/4763

US Classification:

438637, 257E21495

Abstract:

A silicon carbide (SiC) film for use in backend processing of integrated circuit manufacturing, is generated by including hydrogen in the reaction gas mixture. This SiC containing film is suitable for integration into etch stop layers, dielectric cap layers and hard mask layers in interconnects of integrated circuits.

US Patent:

20110034023, Feb 10, 2011

Filed:

Jul 12, 2010

Appl. No.:

12/834700

Inventors:

Laura M. Matz - Macungie PA, US
Ping Jiang - Plano TX, US
William Wesley Dostalik - Plano TX, US
Ting Tsui - Markham, CA

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 21/768
H01L 21/31

US Classification:

438618, 438763, 257E2124, 257E21575

Abstract:

A silicon carbide (SiC) film for use in backend processing of integrated circuit manufacturing, is generated by including hydrogen in the reaction gas mixture. This SiC containing film is suitable for integration into etch stop layers, dielectric cap layers and hardmask layers in interconnects of integrated circuits.

US Patent:

20200368330, Nov 26, 2020

Filed:

Jul 16, 2020

Appl. No.:

16/930766

Inventors:

- San Diego CA, US
Ping Jiang - Wilmington DE, US
Curtis B. Thompson - San Diego CA, US

International Classification:

A61K 38/47
A61K 31/337
C12N 9/26
C12N 11/08

Abstract:

Provided are combinations, compositions and kits containing a hyaluronan degrading enzyme, such as a soluble hyaluronidase, for treatment of hyaluronan-associated conditions, diseases and disorders. In one example, the products include an additional agent or treatment. Such products can be used in methods for administering the products to treat the hyaluronan-associated diseases and conditions, for example, hyaluronan-associated cancers, for example, hyaluronan-rich tumors. The methods include administration of the hyaluronan degrading enzyme composition alone or in combination with other treatments. Also provided are methods and compositions for providing sustained treatment effects in hyaluronan-associated diseases and conditions.

US Patent:

20190336587, Nov 7, 2019

Filed:

May 21, 2019

Appl. No.:

16/418685

Inventors:

- San Diego CA, US
Ping Jiang - Wilmington DE, US
Curtis B. Thompson - San Diego CA, US

International Classification:

A61K 38/47
C12N 11/08
A61K 31/337
C12N 9/26

Abstract:

Provided are combinations, compositions and kits containing a hyaluronan degrading enzyme, such as a soluble hyaluronidase, for treatment of hyaluronan-associated conditions, diseases and disorders. In one example, the products include an additional agent or treatment. Such products can be used in methods for administering the products to treat the hyaluronan-associated diseases and conditions, for example, hyaluronan-associated cancers, for example, hyaluronan-rich tumors. The methods include administration of the hyaluronan degrading enzyme composition alone or in combination with other treatments. Also provided are methods and compositions for providing sustained treatment effects in hyaluronan-associated diseases and conditions.