Ping R Jiang

US Patent:

7625965, Dec 1, 2009

Filed:

Feb 8, 2007

Appl. No.:

11/703969

Inventors:

Ping Jiang - New City NY, US
Chris Hartshorn - Ossining NY, US
Eric R. Pohl - Mt. Kisco NY, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

C08K 5/24

US Classification:

524263, 524430, 524431, 524432, 524433, 524437

Abstract:

There is provided herein a rubber composition comprising (a) at least one rubber component; (b) at least one silane-reactive filler; (c) optionally, at least one activating agent and, (d) at least one silane of the general Formula (1):[XXXSi—](G)[—Y—(CR-Z)]  (1)wherein Xis selected hydrolyzable groups; Xand Xare independently hydrocarbons or selected hydrolyzable groups;.

US Patent:

7816435, Oct 19, 2010

Filed:

Oct 31, 2007

Appl. No.:

11/981371

Inventors:

Ping Jiang - New City NY, US
Eric R. Pohl - Mount Kisco NY, US
Linda Vecere - Fishkill NY, US
Juan Alfonso - Hopewell Junction NY, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

C08K 5/54
C08K 5/24

US Classification:

524263, 524261

Abstract:

A halo-functional silane possesses halogen functionality and alkanedioxysilyl functionality.

US Patent:

8058219, Nov 15, 2011

Filed:

Oct 12, 2006

Appl. No.:

12/090213

Inventors:

Melissa K. Rath - Danbury CT, US
David D. Bernhard - Kooskia ID, US
Thomas H. Baum - New Fairfield CT, US
Ping Jiang - Danbury CT, US
Renjie Zhou - Dayton NJ, US
Michael B. Korzenski - Danbury CT, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C11D 3/39

US Classification:

510175, 510176, 134 13

Abstract:

A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

US Patent:

8143336, Mar 27, 2012

Filed:

Aug 7, 2008

Appl. No.:

12/187765

Inventors:

Ping Jiang - New City NY, US
Juan Alfonso - Hopewell Junction NY, US
Eric R. Pohl - Mount Kisco NY, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

C08K 5/54

US Classification:

524263, 524261

Abstract:

The invention is directed to an activated halo-containing aralkylsilanes possessing at least one hydrolyzable group bonded to a silicon atom and at least one halo functional group bonded to a carbon atom to which both the silicon atom and an aromatic group are covalently bonded. The invention is also directed to a process for making such a silane as well as its use in rubber compositions and articles containing such rubber compositions, such as tires.

US Patent:

8372906, Feb 12, 2013

Filed:

Sep 14, 2010

Appl. No.:

12/881644

Inventors:

Ping Jiang - New City NY, US
Eric R. Pohl - Mount Kisco NY, US
Linda Vecere - Fishkill NY, US
Juan Alfonso - Hopewell Junction NY, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

C08K 5/54
C07F 7/08

US Classification:

524263, 556431

Abstract:

A halo-functional silane possesses halogen functionality and alkanedioxysilyl functionality.

US Patent:

20080306213, Dec 11, 2008

Filed:

Jun 5, 2007

Appl. No.:

11/810300

Inventors:

Ping Jiang - New City NY, US
Robert James Perry - Niskayuna NY, US

International Classification:

C08L 83/00
C08L 47/00

US Classification:

525 5444, 525100, 525105

Abstract:

A process for preparing a rubber composition comprises:

US Patent:

20100112728, May 6, 2010

Filed:

Sep 30, 2009

Appl. No.:

12/570686

Inventors:

Michael B. Korzenski - Danbury CT, US
Ping Jiang - Danbury CT, US
David W. Minsek - New Milford CT, US
Charles Beall - Ada OK, US
Mick Bjelopavlic - Chandler AZ, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

H01L 21/3205
H01L 21/306
C09K 13/08

US Classification:

438 3, 438597, 438664, 438694, 252 791, 252 793, 257E21224, 257E21296, 257E21295, 257E21294

Abstract:

Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.

US Patent:

20100261632, Oct 14, 2010

Filed:

Aug 4, 2008

Appl. No.:

12/671324

Inventors:

Michael Korzenski - Danbury CT, US
Ping Jiang - Danbury CT, US
Brittany Serke - Rochester NY, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

C11D 7/34
C11D 7/36

US Classification:

510175

Abstract:

Cleaning compositions and processes for removing residue from a microelectronic device having said residue thereon. The composition, which is substantially devoid of fluoride species, amine species, and organic solvents, achieves highly efficacious cleaning of the residue material, including post-etch residue, post-ash residue and/or post-CMP residue, from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.