Quan H Tran

US Patent:

6914335, Jul 5, 2005

Filed:

Jan 2, 2002

Appl. No.:

10/038343

Inventors:

Ebrahim Andideh - Portland OR, US
Qing Ma - San Jose CA, US
Quan Tran - San Jose CA, US
Steve Towle - Sunnyvale CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L029/40

US Classification:

257760, 257759, 257522

Abstract:

An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

US Patent:

6362091, Mar 26, 2002

Filed:

Mar 14, 2000

Appl. No.:

09/524766

Inventors:

Ebrahim Andideh - Portland OR
Qing Ma - San Jose CA
Quan Tran - San Jose CA
Steve Towle - Sunnyvale CA

Assignee:

Intel Corporation

International Classification:

H01L 214763

US Classification:

438624, 438692, 438789

Abstract:

An improved semiconductor device and method for making it. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.