Quan M Tran

US Patent:

6914335, Jul 5, 2005

Filed:

Jan 2, 2002

Appl. No.:

10/038343

Inventors:

Ebrahim Andideh - Portland OR, US
Qing Ma - San Jose CA, US
Quan Tran - San Jose CA, US
Steve Towle - Sunnyvale CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L029/40

US Classification:

257760, 257759, 257522

Abstract:

An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

US Patent:

6362091, Mar 26, 2002

Filed:

Mar 14, 2000

Appl. No.:

09/524766

Inventors:

Ebrahim Andideh - Portland OR
Qing Ma - San Jose CA
Quan Tran - San Jose CA
Steve Towle - Sunnyvale CA

Assignee:

Intel Corporation

International Classification:

H01L 214763

US Classification:

438624, 438692, 438789

Abstract:

An improved semiconductor device and method for making it. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

US Patent:

20220383037, Dec 1, 2022

Filed:

May 27, 2021

Appl. No.:

17/332734

Inventors:

- San Jose CA, US
Kushal Kafle - Boston MA, US
Zhe Lin - Fremont CA, US
Zhihong Ding - Fremont CA, US
Scott Cohen - Sunnyvale CA, US
Quan Tran - San Jose CA, US

International Classification:

G06K 9/62
G06N 3/08

Abstract:

This disclosure describes one or more implementations of systems, non-transitory computer-readable media, and methods that extract multiple attributes from an object portrayed in a digital image utilizing a multi-attribute contrastive classification neural network. For example, the disclosed systems utilize a multi-attribute contrastive classification neural network that includes an embedding neural network, a localizer neural network, a multi-attention neural network, and a classifier neural network. In some cases, the disclosed systems train the multi-attribute contrastive classification neural network utilizing a multi-attribute, supervised-contrastive loss. In some embodiments, the disclosed systems generate negative attribute training labels for labeled digital images utilizing positive attribute labels that correspond to the labeled digital images.