May 2014 to 2000 Project Director, Northeast Resiliency ConsortiumBergen Community College
Nov 2011 to 2000 Program Coordinator, Garden State Pathways to Independence (Grant)Center School Holyoke, MA Sep 2010 to Sep 2011 School Based Clinician, Steeples Program, North Adams Public SchoolsUnited Counseling Services Bennington, VT Sep 2008 to Aug 2010 Community Service Program Manager- Specialized Childrens' ServicesSouthshire Substance Abuse Coalition Bennington, VT Jan 2008 to Sep 2008 Program Manager Strategic Prevention FrameworkSouthern Vermont College Bennington, VT Aug 2004 to Jan 2008 Department of Social Sciences-Adjunct FacultyFederal Trio program
Jun 2004 to Jan 2008 Project Director/Upward BoundAdolescence
Sep 2004 to Mar 2006 Early Childhood Development, spring 2007Psychology
Sep 2005 to Nov 2005Community Counseling Center, Inc Show Low, AZ Jul 2002 to May 2004 Clinical Liaison/Vocational Rehabilitation CoordinatorCommunity Counseling Center, Inc Show Low, AZ Jul 2002 to Nov 2003 Project Director/Trainer
Education:
Fordham University Tarrytown, NY Feb 1997 Master of Science in Counseling and Personnel ServicesSyracuse University Syracuse, NY May 1993 Bachelor of Arts in Psychology
Us Patents
Monolithically Integrated Cold Point Thermoelectric Cooler
Emanuel Cooper - Scarsdale NY, US Steven Cordes - Yorktown Heights NY, US David Dimilia - Wappingers Falls NY, US Bruce Doris - Brewster NY, US James Doyle - Bronx NY, US Uttam Ghoshal - Austin TX, US Robin Wanner - Mount Kisco NY, US
Assignee:
International Business Machines Corp. - Armonk NY
International Classification:
H01L021/00
US Classification:
438/054000
Abstract:
A method and system for forming a thermoelement for a thermoelectric cooler is provided. In one embodiment a substrate having a plurality of pointed tips covered by a metallic layer is formed. Portions of the metallic layer are covered by an insulator and other portions of the metallic layer are exposed. Next, a patterned layer of thermoelectric material is formed by depositions extending from the exposed portions of the metallic layer in the presence of a deposition mask. Finally, a metallic layer is formed to selectively contact the patterned layer of thermoelectric material.