Ruying Y Tong

age ~67

from San Diego, CA

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Also known as:

Connected to:

Bottom Conductor For Integrated Mram
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US Patent:

7358100, Apr 15, 2008
Filed:

Aug 14, 2007
Appl. No.:

11/891923
Inventors:

Wei Cao - San Jose CA, US
Cheng Horng - San Jose CA, US
Ruying Tong - Los Gatos CA, US
Chen-Jung Chien - Sunnyvale CA, US
Liubo Hong - San Jose CA, US
Assignee:

Magic Technologies, Inc. - Milpitas CA
International Classification:

H01L 21/00
US Classification:

438 3, 257295, 257E21665
Abstract:

A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum.

Bottom Conductor For Integrated Mram
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US Patent:

20070045758, Mar 1, 2007
Filed:

Aug 30, 2005
Appl. No.:

11/215276
Inventors:

Wei Cao - San Jose CA, US
Cheng Horng - San Jose CA, US
Ruying Tong - Los Gatos CA, US
Chen-Jung Chien - Sunnyvale CA, US
Liubo Hong - San Jose CA, US
International Classification:

H01L 43/00
US Classification:

257421000
Abstract:

A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum. A method for its formation is also described.

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