Samantha L Cruz

US Patent:

20120104411, May 3, 2012

Filed:

Oct 27, 2011

Appl. No.:

13/283211

Inventors:

Michael Iza - Santa Barbara CA, US
Carl J. Neufeld - Goleta CA, US
Samantha C. Cruz - Goleta CA, US
Robert M. Farrell - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Umesh K. Mishra - Montecito CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 31/0236
H01L 31/18
H01L 31/0352
H01L 31/0304
H01L 33/32
H01L 33/58
H01L 33/22

US Classification:

257 76, 438 29, 438 71, 257 98, 257432, 257 95, 257184, 257E3113, 257E33074, 257E31019, 257E33023

Abstract:

A method for fabricating a III-nitride semiconductor film, comprising depositing or growing a III-nitride semiconductor film in a semiconductor light absorbing or light emitting device structure; and growing a textured or structured surface of the III-nitride nitride semiconductor film in situ with the growing or the deposition of the III-nitride semiconductor film, by controlling the growing of the III-nitride semiconductor film to obtain a texture of the textured surface, or one or more structures of the structured surface, that increase output power of light from the light emitting device, or increase absorption of light in the light absorbing device.