Paul Kevin Cox - Austin TX Thy Ngu-Uyen Tran - Vancouver WA Samuel Jay Wright - Austin TX Judith Sobresky - Dripping Springs TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 21285 H01L 21311 H01L 21336 H01L 218244
US Classification:
438744
Abstract:
A method for forming a semiconductor device, including providing a silicon substrate (10), forming a gate stack (11) on the substrate (10), coating a deep ultra-violet (DUV) photoresist (30) on the gate stack (11), exposing and developing the photoresist (30), and etching the gate stack (11). According to the present invention, the gate stack (11) has a dielectric nitride layer (26), particularly, a silicon nitride layer. An adhesive oxide layer (28) is provided between the nitride layer (26) and the photoresist (30) to prevent undesirable lifting of the photoresist (30). Yield is greatly increased and defectivity is reduced.
Name / Title
Company / Classification
Phones & Addresses
Samuel Wright Manager
Arkansas Department of National Guard National Security · National Guard Museum
Rancho Santa MargaritaI am a private pilot, love War Birds of WWII, fly model warbirds with radio control. i fly as often as there is a seat in a friend's warbird. Currently... I am a private pilot, love War Birds of WWII, fly model warbirds with radio control. i fly as often as there is a seat in a friend's warbird. Currently restoring a 1941 N2S-3 Stearman trainer.