Siu C Cheng

US Patent:

8569105, Oct 29, 2013

Filed:

Apr 25, 2012

Appl. No.:

13/456058

Inventors:

Siu F. Cheng - Los Angeles CA, US
Deenesh Padhi - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438104, 438623, 438628, 257 4, 257E45003, 257E21006

Abstract:

A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.

US Patent:

20120043518, Feb 23, 2012

Filed:

Aug 18, 2010

Appl. No.:

12/859230

Inventors:

Siu F. CHENG - Los Angeles CA, US
Heung Lak PARK - Santa Clara CA, US
Deenesh PADHI - Sunnyvale CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 29/04
H01L 47/00

US Classification:

257 4, 257 2, 438482, 257E47005, 257E29003

Abstract:

An electronic device comprises a variable resistance memory element on a substrate. The variable resistance memory element comprises (i) an amorphous carbon layer comprising a hydrogen content of at least about 30 atomic percent, and a maximum leakage current of less than about 1×10amps, and (ii) a pair of electrodes about the amorphous carbon layer. Methods of fabricating this and other devices are also described.

US Patent:

20230049702, Feb 16, 2023

Filed:

Sep 7, 2022

Appl. No.:

17/939744

Inventors:

- Redondo Beach CA, US
Siu Fai Cheng - Culver City CA, US
Robert F. Hicks - Los Angeles CA, US

Assignee:

Surfx Technologies LLC - Redondo Beach CA

International Classification:

H01J 37/32
H01L 21/67
H01L 21/02
H01L 21/48
C23C 16/50

Abstract:

Plasma applications are disclosed that operate with argon and other molecular gases at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species. The plasma apparatus and the enclosure that contains the plasma apparatus and the substrate are substantially free of particles, so that the substrate does not become contaminated with particles during processing. The plasma is developed through capacitive discharge without streamers or micro-arcs. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; to activate the surfaces of materials, thereby enhancing bonding between the material and a second material; to etch thin films of materials from a substrate; and to deposit thin films and coatings onto a substrate; all of which processes are carried out without contaminating the surface of the substrate with substantial numbers of particles.