Stephen A Ellis

US Patent:

7242270, Jul 10, 2007

Filed:

Feb 28, 2005

Appl. No.:

11/069409

Inventors:

Stephen Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H03H 9/54

US Classification:

333187, 333189, 333192

Abstract:

The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.

US Patent:

7332985, Feb 19, 2008

Filed:

Oct 19, 2004

Appl. No.:

10/969744

Inventors:

Stephen Ellis - Pleasanton CA, US
Paul A. Bradley - Mountain View CA, US
Yury Oshmyansky - Laguna Beach CA, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte Ltd. - Singapore

International Classification:

H03H 9/54
H03H 9/60

US Classification:

333187, 333189, 333192

Abstract:

The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.

US Patent:

7358831, Apr 15, 2008

Filed:

Oct 19, 2004

Appl. No.:

10/969636

Inventors:

Stephen Ellis - Pleasanton CA, US
Yury Oshmyansky - Laguna Beach CA, US

International Classification:

H03H 9/54
H03H 9/60

US Classification:

333187, 333189, 333192

Abstract:

The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.

US Patent:

7391285, Jun 24, 2008

Filed:

Oct 13, 2004

Appl. No.:

10/965637

Inventors:

Richard C. Ruby - Menlo Park CA, US
Stephen L. Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP Pte Ltd - Singapore

International Classification:

H03H 9/54

US Classification:

333189, 333 32

Abstract:

One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

US Patent:

7400217, Jul 15, 2008

Filed:

Oct 13, 2004

Appl. No.:

10/965541

Inventors:

Stephen L. Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP Pte Ltd - Singapore

International Classification:

H03H 9/54

US Classification:

333187, 333189, 333192, 310326, 310334

Abstract:

The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

US Patent:

7562429, Jul 21, 2009

Filed:

Jun 20, 2005

Appl. No.:

11/156676

Inventors:

Stephen Ellis - Pleasanton CA, US

Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H03H 3/02
H01L 41/22
H03H 9/15

US Classification:

29 2535, 29594, 333187, 216 2, 216 13, 216 52, 310324

Abstract:

A substrate defining a cavity comprising a wide, shallow first portion and a narrow, deep second portion is provided. The first portion of the cavity extends into the substrate from the front side of the substrate and is filled with sacrificial material. The second portion extends deeper into the substrate from the first portion. A device structure is fabricated over the sacrificial material. A release etchant is introduced from the back side of the substrate via the second portion of the cavity to remove from the first portion of the cavity the sacrificial material underlying the device structure. Removing from the first portion of the cavity the sacrificial material underlying the device structure by introducing the release etchant from the back side of the substrate via the second portion of the cavity allows the release etch to be performed without exposing the device structure to the release etchant. This allows the device structure to incorporate materials that have a low etch selectivity with respect to the sacrificial material.

US Patent:

8639621, Jan 28, 2014

Filed:

Apr 25, 2012

Appl. No.:

13/456073

Inventors:

Stephen M. Ellis - Tahoe City CA, US
Michael J. Kennedy - San Francisco CA, US
Ashish Bhoopen Kurani - Burlingame CA, US
Melissa Lowry - San Francisco CA, US
Uma Meyyappan - Fremont CA, US
Bipin Sahni - Pleasanton CA, US
Nikolai Stroke - Gilbert AZ, US

Assignee:

Wells Fargo Bank, N.A. - San Francisco CA

International Classification:

G06Q 40/00

US Classification:

705 41, 705 42

Abstract:

A computer-implemented method includes capturing an image by a mobile computing device and determining a geographic location and a direction of the mobile computing device while capturing the image. The method includes generating a display that includes the image and that identifies the locations of merchants that have at least one offer available for a user of the mobile device based on the geographic location and the direction of the mobile computing device and generating the at least one offer based on the past transactions of the user.

US Patent:

7362198, Apr 22, 2008

Filed:

Oct 13, 2004

Appl. No.:

10/965449

Inventors:

Stephen L. Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd - Singapore

International Classification:

H03H 9/54

US Classification:

333187, 333189, 333192, 310322, 310334

Abstract:

The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances (and pass bandwidths) that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.