Stephen R Ellis

US Patent:

7173504, Feb 6, 2007

Filed:

Oct 13, 2004

Appl. No.:

10/965474

Inventors:

Naghmeh Sarkeshik - Cupertino CA, US
Stephen L. Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H03H 9/54
H03H 9/60

US Classification:

333189, 333192, 333 32

Abstract:

The film acoustically-coupled transformer (FACT) has decoupled stacked bulk acoustic resonators (DSBARs), a first electrical circuit and a second electrical circuit. Each of the DSBARs has a lower film bulk acoustic resonator (FBAR), an upper FBAR and an acoustic decoupler. The upper FBAR is stacked on the lower FBAR and the acoustic decoupler is located between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The first electrical circuit interconnects the lower FBARs. The second electrical circuit interconnects the upper FBARs. The FBARs of one of the DSBARs differ in electrical impedance from the FBARs of another of the DSBARs. The FACT has an impedance transformation ratio greater than 1:m, where m is the number of DSBARs. The actual impedance transformation ratio depends on the ratio of the impedances of the FBARs.

US Patent:

7242270, Jul 10, 2007

Filed:

Feb 28, 2005

Appl. No.:

11/069409

Inventors:

Stephen Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H03H 9/54

US Classification:

333187, 333189, 333192

Abstract:

The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.

US Patent:

7332985, Feb 19, 2008

Filed:

Oct 19, 2004

Appl. No.:

10/969744

Inventors:

Stephen Ellis - Pleasanton CA, US
Paul A. Bradley - Mountain View CA, US
Yury Oshmyansky - Laguna Beach CA, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte Ltd. - Singapore

International Classification:

H03H 9/54
H03H 9/60

US Classification:

333187, 333189, 333192

Abstract:

The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.

US Patent:

7358831, Apr 15, 2008

Filed:

Oct 19, 2004

Appl. No.:

10/969636

Inventors:

Stephen Ellis - Pleasanton CA, US
Yury Oshmyansky - Laguna Beach CA, US

International Classification:

H03H 9/54
H03H 9/60

US Classification:

333187, 333189, 333192

Abstract:

The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.

US Patent:

7388455, Jun 17, 2008

Filed:

Oct 13, 2004

Appl. No.:

10/965586

Inventors:

Naghmeh Sarkeshik - Cupertino CA, US
Stephen L. Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP Pte Ltd - Singapore

International Classification:

H03H 9/54
H03H 9/60

US Classification:

333189, 333192, 333 32, 333 25

Abstract:

The film acoustically-coupled transformer (FACT) has a first and second decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR), an upper FBAR atop the lower FBAR, and an acoustic decoupler between them FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. A first electrical circuit interconnects the lowers FBAR of the first DSBAR and the second DSBAR. A second electrical circuit interconnects the upper FBARs of the first DSBAR and the second DSBAR. In at least one of the DSBARs, the acoustic decoupler and one electrode of the each of the lower FBAR and the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor. The FACT additionally has an inductor electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the FACT.

US Patent:

7391285, Jun 24, 2008

Filed:

Oct 13, 2004

Appl. No.:

10/965637

Inventors:

Richard C. Ruby - Menlo Park CA, US
Stephen L. Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP Pte Ltd - Singapore

International Classification:

H03H 9/54

US Classification:

333189, 333 32

Abstract:

One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

US Patent:

7400217, Jul 15, 2008

Filed:

Oct 13, 2004

Appl. No.:

10/965541

Inventors:

Stephen L. Ellis - Pleasanton CA, US

Assignee:

Avago Technologies Wireless IP Pte Ltd - Singapore

International Classification:

H03H 9/54

US Classification:

333187, 333189, 333192, 310326, 310334

Abstract:

The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

US Patent:

7562429, Jul 21, 2009

Filed:

Jun 20, 2005

Appl. No.:

11/156676

Inventors:

Stephen Ellis - Pleasanton CA, US

Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H03H 3/02
H01L 41/22
H03H 9/15

US Classification:

29 2535, 29594, 333187, 216 2, 216 13, 216 52, 310324

Abstract:

A substrate defining a cavity comprising a wide, shallow first portion and a narrow, deep second portion is provided. The first portion of the cavity extends into the substrate from the front side of the substrate and is filled with sacrificial material. The second portion extends deeper into the substrate from the first portion. A device structure is fabricated over the sacrificial material. A release etchant is introduced from the back side of the substrate via the second portion of the cavity to remove from the first portion of the cavity the sacrificial material underlying the device structure. Removing from the first portion of the cavity the sacrificial material underlying the device structure by introducing the release etchant from the back side of the substrate via the second portion of the cavity allows the release etch to be performed without exposing the device structure to the release etchant. This allows the device structure to incorporate materials that have a low etch selectivity with respect to the sacrificial material.