Steven Chuang

US Patent:

20180151386, May 31, 2018

Filed:

Nov 7, 2017

Appl. No.:

15/805857

Inventors:

- Fremont CA, US
Sangjun CHO - San Ramon CA, US
Steven CHUANG - San Francisco CA, US
Jian WU - Fremont CA, US

International Classification:

H01L 21/311
H01L 21/033
H01L 21/027
H01L 21/02

Abstract:

A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.