Sung Joo Lim

US Patent:

8389393, Mar 5, 2013

Filed:

Jul 29, 2009

Appl. No.:

12/511634

Inventors:

Silvija Grade{hacek over (c)}ak - Cambridge MA, US
Chun-Hao Tseng - Taichung, TW
Sung Keun Lim - Revere MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L 21/28
H01L 21/3205

US Classification:

438606, 977815, 977893, 257E21295

Abstract:

A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.

US Patent:

20130140524, Jun 6, 2013

Filed:

Jan 17, 2013

Appl. No.:

13/744011

Inventors:

MASSACHUSETTS INSTITUTE OF TECHNOLOGY - Cambridge MA, US
Chun-Hao Tseng - Taichung, TW
Sung Keun Lim - Revere MA, US

Assignee:

MASSACHUSETTS INSTITUTE OF TECHNOLOGY - Cambridge MA

International Classification:

H01L 29/66

US Classification:

257 14

Abstract:

A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.