Susan T Abraham

US Patent:

57729069, Jun 30, 1998

Filed:

May 30, 1996

Appl. No.:

8/652718

Inventors:

Susan C. Abraham - San Jose CA

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

H01L 21306

US Classification:

216 72

Abstract:

A method for etching a layer stack structure on a substrate is provided. The method includes a step of etching the layer stack to a predefined stopping point using a reverse etch rate loading inducing chemistry. The method also includes a step of etching said layer stack through a target layer in the layer stack structure using a natural etch rate loading chemistry.

US Patent:

60872667, Jul 11, 2000

Filed:

Jun 27, 1997

Appl. No.:

8/883860

Inventors:

Susan C. Abraham - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 213213

US Classification:

438714

Abstract:

A method for improving microloading of a substrate to be etched in a plasma processing chamber. The substrate is etched with a first etchant to form trenches having a given trench width. The plasma processing chamber has a first power supply configured to energize a first electrode of the chamber and a second power supply configured to energize a second electrode of the chamber. The method includes obtaining a first data set among a plurality of data sets correlating power ratios of the first power supply and the second power supply with microloading percentages for the first etchant for different trench widths. The first data set correlates the power ratios with the microloading percentages for a first trench width. The first trench width approximates the given trench width as closely as possible. The method also includes extrapolating a second data set from the first data set.

US Patent:

60048840, Dec 21, 1999

Filed:

Feb 15, 1996

Appl. No.:

8/602251

Inventors:

Susan C. Abraham - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21302

US Classification:

438714

Abstract:

A method for etching a TiN layer of a wafer stack in a plasma processing chamber. The method includes the step of etching at least partially through the TiN layer using a first chemistry, which preferably includes a TiN etchant, a noble gas, and a polymer-forming chemical. In one embodiment, the TiN etchant is Cl. sub. 2, the noble gas is argon, and the polymer-forming chemical is CHF. sub. 3.

US Patent:

59522445, Sep 14, 1999

Filed:

Feb 15, 1996

Appl. No.:

8/601780

Inventors:

Susan C. Abraham - San Jose CA
Peter H. Chen - Milpitas CA
Jerry Yang - Milpitas CA

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

H01L 213065

US Classification:

438714

Abstract:

A method, in a plasma processing chamber, for etching through a selected portion of layers of a wafer stack, which comprises an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method comprises the step of etching at least partially through the anti-reflective layer of the wafer stack with a first chemistry that comprises both an etchant chemical and a polymer-forming chemical. Further, the method comprises the step of etching at least partially through the metallization layer of the wafer stack with a second chemistry different from the first chemistry.

US Patent:

58464433, Dec 8, 1998

Filed:

Jul 9, 1996

Appl. No.:

8/678034

Inventors:

Susan C. Abraham - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23F 100

US Classification:

216 77

Abstract:

A method in a plasma processing chamber, for etching through a selected portion of an aluminum-containing layer and a titanium-containing layer. The titanium-containing layer is disposed above the aluminum-containing layer. The method includes a first etching step that etches at least partially through the titanium-containing layer using a first source gas composition. The first source gas composition consists essentially of the Cl. sub. 2 etchant and a first mixture. The first mixture consists essentially of HCl and CHF. sub. 3. The first source gas composition has a first flow ratio of the Cl. sub. 2 etchant to the first mixture. There is further included a second etching step that etches at least partially through the aluminum-containing layer using a second source gas composition. The second source gas composition consists essentially of a Cl. sub. 2 etchant and a second mixture.

US Patent:

58830073, Mar 16, 1999

Filed:

Dec 20, 1996

Appl. No.:

8/770336

Inventors:

Susan C. Abraham - San Jose CA
Gregory J. Goldspring - Alameda CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21302

US Classification:

438714

Abstract:

Disclosed is an inventive multiple-chemistry etching method suited for etching through selected portions of layers in a layer stack in a plasma processing chamber. The layer stack preferably includes at least an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method includes a first etching step where the anti-reflective layer of the layer stack is at least partially etched with a first chemistry, the first chemistry comprising an etchant chemical and a polymer-forming chemical. Once the first etching step is complete, the method proceeds to a second etching step where at least part of the metallization layer of the layer stack is etched with a second chemistry different from the first chemistry.

US Patent:

59807687, Nov 9, 1999

Filed:

Mar 7, 1997

Appl. No.:

8/813778

Inventors:

Susan C. Abraham - San Jose CA

Assignee:

Lam Research Corp. - Fremont CA

International Classification:

H01L 2100

US Classification:

216 67

Abstract:

In a plasma reactor, a method for removing photoresist mask defects, which includes introducing a substrate having thereon a photoresist mask into the plasma reactor. The method further includes flowing into the plasma reactor an etchant source gas comprising nitrogen. The etchant source gas is substantially oxidant-free. The method also includes removing the photoresist mask defects employing a plasma struck with the etchant source gas.